SI7901EDN-T1-E3
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Technische Details SI7901EDN-T1-E3
Description: MOSFET 2P-CH 20V 4.3A PPAK 1212, Supplier Device Package: PowerPAK® 1212-8 Dual, Vgs(th) (Max) @ Id: 1V @ 800µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V, Rds On (Max) @ Id, Vgs: 48mOhm @ 6.3A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 4.3A, Drain to Source Voltage (Vdss): 20V, Power - Max: 1.3W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount, Package / Case: PowerPAK® 1212-8 Dual, Packaging: Tape & Reel (TR).
Weitere Produktangebote SI7901EDN-T1-E3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SI7901EDN-T1-E3 | Vishay Siliconix |
Description: MOSFET 2P-CH 20V 4.3A PPAK 1212 Supplier Device Package: PowerPAK® 1212-8 Dual Vgs(th) (Max) @ Id: 1V @ 800µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V Rds On (Max) @ Id, Vgs: 48mOhm @ 6.3A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.3A Drain to Source Voltage (Vdss): 20V Power - Max: 1.3W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8 Dual Packaging: Tape & Reel (TR) |
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Im Einkaufswagen Stück im Wert von UAH |
| SI7901EDN-T1-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 4.3A PPAK 1212
Supplier Device Package: PowerPAK® 1212-8 Dual
Vgs(th) (Max) @ Id: 1V @ 800µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
Rds On (Max) @ Id, Vgs: 48mOhm @ 6.3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.3A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.3W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8 Dual
Packaging: Tape & Reel (TR)
Description: MOSFET 2P-CH 20V 4.3A PPAK 1212
Supplier Device Package: PowerPAK® 1212-8 Dual
Vgs(th) (Max) @ Id: 1V @ 800µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
Rds On (Max) @ Id, Vgs: 48mOhm @ 6.3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.3A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.3W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8 Dual
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH