SI7956DP-T1-E3

SI7956DP-T1-E3

Hersteller: Vishay
Trans MOSFET N-CH 150V 2.6A 8-Pin PowerPAK SO T/R
72960.pdf 72960.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 248 Stücke
Lieferzeit 14-21 Tag (e)

42+ 3.92 EUR
47+ 3.24 EUR
100+ 2.85 EUR

Technische Details SI7956DP-T1-E3

Description: MOSFET 2N-CH 150V 2.6A PPAK SO-8, Power - Max: 1.4W, Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Rds On (Max) @ Id, Vgs: 105mOhm @ 4.1A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.6A, Drain to Source Voltage (Vdss): 150V, FET Feature: Logic Level Gate, FET Type: 2 N-Channel (Dual), Part Status: Active, Packaging: Tape & Reel (TR), Supplier Device Package: PowerPAK® SO-8 Dual, Package / Case: PowerPAK® SO-8 Dual, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ).

Preis SI7956DP-T1-E3 ab 2.85 EUR bis 3.92 EUR

SI7956DP-T1-E3
Hersteller: Vishay
Trans MOSFET N-CH 150V 2.6A 8-Pin PowerPAK SO T/R
72960.pdf 72960.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7956DP-T1-E3
SI7956DP-T1-E3
Hersteller: Vishay Semiconductors
MOSFET 150V Vds 20V Vgs PowerPAK SO-8
72960-1766089.pdf
auf Bestellung 1436 Stücke
Lieferzeit 14-28 Tag (e)
SI7956DP-T1-E3
SI7956DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 150V 2.6A PPAK SO-8
Power - Max: 1.4W
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 105mOhm @ 4.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A
Drain to Source Voltage (Vdss): 150V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
72960.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7956DP-T1-E3
SI7956DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 150V 2.6A PPAK SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.4W
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 105 mOhm @ 4.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A
Drain to Source Voltage (Vdss): 150V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
72960.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7956DP-T1-E3
SI7956DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 150V 2.6A PPAK SO-8
Part Status: Active
Packaging: Cut Tape (CT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 2.6A
Rds On (Max) @ Id, Vgs: 105mOhm @ 4.1A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual
72960.pdf
auf Bestellung 2773 Stücke
Lieferzeit 21-28 Tag (e)