SI7956DP-T1-E3 Vishay Semiconductors
auf Bestellung 5333 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 5.91 EUR |
| 10+ | 4.42 EUR |
| 100+ | 3.22 EUR |
| 500+ | 2.66 EUR |
| 1000+ | 2.46 EUR |
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Technische Details SI7956DP-T1-E3 Vishay Semiconductors
Description: MOSFET 2N-CH 150V 2.6A PPAK SO8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8 Dual, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.4W, Drain to Source Voltage (Vdss): 150V, Current - Continuous Drain (Id) @ 25°C: 2.6A, Rds On (Max) @ Id, Vgs: 105mOhm @ 4.1A, 10V, Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerPAK® SO-8 Dual.
Weitere Produktangebote SI7956DP-T1-E3 nach Preis ab 2.48 EUR bis 6.99 EUR
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SI7956DP-T1-E3 | Hersteller : Vishay Siliconix |
 Description: MOSFET 2N-CH 150V 2.6A PPAK SO8Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 2.6A Rds On (Max) @ Id, Vgs: 105mOhm @ 4.1A, 10V Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Dual |
auf Bestellung 2291 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7956DP-T1-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 150V 2.6A 8-Pin PowerPAK SO T/R |
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SI7956DP-T1-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 150V 2.6A 8-Pin PowerPAK SO T/R |
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| SI7956DP-T1-E3 | Hersteller : VISHAY |
SI7956DP-T1-E3 SMD N channel transistors |
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SI7956DP-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 150V 2.6A PPAK SO8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 2.6A Rds On (Max) @ Id, Vgs: 105mOhm @ 4.1A, 10V Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Dual |
Produkt ist nicht verfügbar |