SI8416DB-T2-E1 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 8V 16A 6MICRO FOOT
Packaging: Tape & Reel (TR)
Package / Case: 6-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 2.77W (Ta), 13W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 6-Micro Foot™ (1.5x1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 4 V
auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.62 EUR |
| 6000+ | 0.58 EUR |
| 9000+ | 0.54 EUR |
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Technische Details SI8416DB-T2-E1 Vishay Siliconix
Description: MOSFET N-CH 8V 16A 6MICRO FOOT, Packaging: Tape & Reel (TR), Package / Case: 6-UFBGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), Rds On (Max) @ Id, Vgs: 23mOhm @ 1.5A, 4.5V, Power Dissipation (Max): 2.77W (Ta), 13W (Tc), Vgs(th) (Max) @ Id: 800mV @ 250µA, Supplier Device Package: 6-Micro Foot™ (1.5x1), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Vgs (Max): ±5V, Drain to Source Voltage (Vdss): 8 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 4 V.
Weitere Produktangebote SI8416DB-T2-E1 nach Preis ab 0.69 EUR bis 1.66 EUR
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SI8416DB-T2-E1 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 8V 16A 6MICRO FOOT Packaging: Cut Tape (CT) Package / Case: 6-UFBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 1.5A, 4.5V Power Dissipation (Max): 2.77W (Ta), 13W (Tc) Vgs(th) (Max) @ Id: 800mV @ 250µA Supplier Device Package: 6-Micro Foot™ (1.5x1) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±5V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 4 V |
auf Bestellung 16052 Stücke: Lieferzeit 21-28 Tag (e) |
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SI8416DB-T2-E1 | Hersteller : Vishay Semiconductors |
MOSFET 8V Vds 5V Vgs MICRO FOOT 1.5 x 1 |
auf Bestellung 661 Stücke: Lieferzeit 14-28 Tag (e) |
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SI8416DB-T2-E1 | Hersteller : Vishay |
Trans MOSFET N-CH 8V 16A 6-Pin Micro Foot T/R |
Produkt ist nicht verfügbar |
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| SI8416DB-T2-E1 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 8V; 16A; Idm: 20A; 13W Mounting: SMD Kind of package: reel; tape Power dissipation: 13W Polarisation: unipolar Gate charge: 26nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±5V Pulsed drain current: 20A Drain-source voltage: 8V Drain current: 16A On-state resistance: 95mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI8416DB-T2-E1 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 8V; 16A; Idm: 20A; 13W Mounting: SMD Kind of package: reel; tape Power dissipation: 13W Polarisation: unipolar Gate charge: 26nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±5V Pulsed drain current: 20A Drain-source voltage: 8V Drain current: 16A On-state resistance: 95mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |