SI8416DB-T2-E1

SI8416DB-T2-E1

SI8416DB-T2-E1

Hersteller: Vishay Semiconductors
MOSFET 8V Vds 5V Vgs MICRO FOOT 1.5 x 1
si8416db-1764592.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 340 Stücke
Lieferzeit 14-28 Tag (e)
29+ 1.83 EUR
33+ 1.61 EUR
100+ 1.24 EUR
500+ 0.98 EUR

Technische Details SI8416DB-T2-E1

Description: MOSFET N-CH 8V 16A 6MICRO FOOT, Rds On (Max) @ Id, Vgs: 23mOhm @ 1.5A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-UFBGA, Packaging: Tape & Reel (TR), Vgs (Max): ±5V, Drain to Source Voltage (Vdss): 8 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 4 V, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Part Status: Active, Supplier Device Package: 6-Micro Foot™ (1.5x1), Vgs(th) (Max) @ Id: 800mV @ 250µA, Power Dissipation (Max): 2.77W (Ta), 13W (Tc).

Preis SI8416DB-T2-E1 ab 0.98 EUR bis 1.83 EUR

SI8416DB-T2-E1
SI8416DB-T2-E1
Hersteller: Vishay
Trans MOSFET N-CH 8V 16A 6-Pin Micro Foot T/R
si8416db.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI8416DB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 8V 16A MICRO
Vgs(th) (Max) @ Id: 800mV @ 250µA
Rds On (Max) @ Id, Vgs: 23 mOhm @ 1.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 8V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: 6-Micro Foot™ (1.5x1)
Package / Case: 6-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 13W
Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 4V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
si8416db.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI8416DB-T2-E1
SI8416DB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 8V 16A 6MICRO FOOT
Rds On (Max) @ Id, Vgs: 23mOhm @ 1.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UFBGA
Packaging: Tape & Reel (TR)
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 4 V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Supplier Device Package: 6-Micro Foot™ (1.5x1)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Power Dissipation (Max): 2.77W (Ta), 13W (Tc)
si8416db.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI8416DB-T2-E1
SI8416DB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 8V 16A 6MICRO FOOT
Supplier Device Package: 6-Micro Foot™ (1.5x1)
Power Dissipation (Max): 2.77W (Ta), 13W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Rds On (Max) @ Id, Vgs: 23mOhm @ 1.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 4 V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UFBGA
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Drain to Source Voltage (Vdss): 8 V
Vgs (Max): ±5V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
si8416db.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen