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SI8416DB-T2-E1 Vishay Siliconix


si8416db.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 8V 16A 6MICRO FOOT
Packaging: Tape & Reel (TR)
Package / Case: 6-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 2.77W (Ta), 13W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 6-Micro Foot™ (1.5x1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 4 V
auf Bestellung 15000 Stücke:
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6000+0.5 EUR
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Technische Details SI8416DB-T2-E1 Vishay Siliconix

Description: MOSFET N-CH 8V 16A 6MICRO FOOT, Packaging: Tape & Reel (TR), Package / Case: 6-UFBGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), Rds On (Max) @ Id, Vgs: 23mOhm @ 1.5A, 4.5V, Power Dissipation (Max): 2.77W (Ta), 13W (Tc), Vgs(th) (Max) @ Id: 800mV @ 250µA, Supplier Device Package: 6-Micro Foot™ (1.5x1), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Vgs (Max): ±5V, Drain to Source Voltage (Vdss): 8 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 4 V.

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SI8416DB-T2-E1 SI8416DB-T2-E1 Vishay Semiconductors si8416db.pdf MOSFETs 8V Vds 5V Vgs MICRO FOOT 1.5 x 1
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100+0.75 EUR
500+0.62 EUR
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SI8416DB-T2-E1 SI8416DB-T2-E1 Vishay Siliconix si8416db.pdf Description: MOSFET N-CH 8V 16A 6MICRO FOOT
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 2.77W (Ta), 13W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 6-Micro Foot™ (1.5x1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 4 V
auf Bestellung 16372 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.74 EUR
17+1.26 EUR
100+0.87 EUR
500+0.69 EUR
1000+0.62 EUR
Mindestbestellmenge: 13 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI8416DB-T2-E1 si8416db.pdf
Hersteller: Vishay Semiconductors
MOSFETs 8V Vds 5V Vgs MICRO FOOT 1.5 x 1
auf Bestellung 3401 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+1.54 EUR
10+1.11 EUR
100+0.75 EUR
500+0.62 EUR
1000+0.6 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI8416DB-T2-E1 si8416db.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 8V 16A 6MICRO FOOT
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 2.77W (Ta), 13W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 6-Micro Foot™ (1.5x1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 4 V
auf Bestellung 16372 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
13+1.74 EUR
17+1.26 EUR
100+0.87 EUR
500+0.69 EUR
1000+0.62 EUR
Mindestbestellmenge: 13 Stücke
Im Einkaufswagen  Stück im Wert von  UAH