SI8472DB-T2-E1

SI8472DB-T2-E1

Hersteller: Vishay
Trans MOSFET N-CH 20V 4.5A 4-Pin Micro Foot T/R
si8472db.pdf si8472db.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 3 Stücke
Lieferzeit 14-21 Tag (e)

Technische Details SI8472DB-T2-E1

Description: MOSFET N-CH 20V 4MICRO FOOT, Power Dissipation (Max): 780mW (Ta), Rds On (Max) @ Id, Vgs: 44mOhm @ 1.5A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V, Package / Case: 4-UFBGA, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 8 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Part Status: Active, Supplier Device Package: 4-MICRO FOOT® (1x1), Vgs(th) (Max) @ Id: 900mV @ 250µA, Packaging: Tape & Reel (TR).

Preis SI8472DB-T2-E1 ab 0 EUR bis 0 EUR

SI8472DB-T2-E1
SI8472DB-T2-E1
Hersteller: Vishay Semiconductors
MOSFET 20V Vds 8V Vgs MICRO FOOT 1 x 1
si8472db-1764403.pdf
auf Bestellung 3000 Stücke
Lieferzeit 14-28 Tag (e)
SI8472DB-T2-E1
Hersteller: Vishay
Trans MOSFET N-CH 20V 4.5A 4-Pin Micro Foot T/R
si8472db.pdf si8472db.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI8472DB-T2-E1
SI8472DB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 4MICRO FOOT
Rds On (Max) @ Id, Vgs: 44mOhm @ 1.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-UFBGA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: 4-MICRO FOOT® (1x1)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 780mW (Ta)
si8472db.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI8472DB-T2-E1
SI8472DB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 3.3A MICRO
Rds On (Max) @ Id, Vgs: 44mOhm @ 1.5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: 4-UFBGA
Supplier Device Package: 4-Micro Foot (1x1)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 780mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 8V
Vgs(th) (Max) @ Id: 900mV @ 250µA
si8472db.pdf
auf Bestellung 8210 Stücke
Lieferzeit 21-28 Tag (e)
SI8472DB-T2-E1
SI8472DB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 4MICRO FOOT
Power Dissipation (Max): 780mW (Ta)
Rds On (Max) @ Id, Vgs: 44mOhm @ 1.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V
Package / Case: 4-UFBGA
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: 4-MICRO FOOT® (1x1)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Packaging: Tape & Reel (TR)
si8472db.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen