Si8823EDB-T2-E1 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET P-CH 20V 2.7A 4MICRO FOOT
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 1A, 4.5V
Power Dissipation (Max): 900mW (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 4-MICRO FOOT® (0.8x0.8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 10 V
auf Bestellung 2971 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 28+ | 0.94 EUR |
| 36+ | 0.73 EUR |
| 100+ | 0.44 EUR |
| 500+ | 0.41 EUR |
| 1000+ | 0.28 EUR |
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Technische Details Si8823EDB-T2-E1 Vishay Siliconix
Description: MOSFET P-CH 20V 2.7A 4MICRO FOOT, Packaging: Tape & Reel (TR), Package / Case: 4-XFBGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc), Rds On (Max) @ Id, Vgs: 95mOhm @ 1A, 4.5V, Power Dissipation (Max): 900mW (Tc), Vgs(th) (Max) @ Id: 800mV @ 250µA, Supplier Device Package: 4-MICRO FOOT® (0.8x0.8), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 10 V.
Weitere Produktangebote Si8823EDB-T2-E1 nach Preis ab 0.22 EUR bis 0.94 EUR
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Si8823EDB-T2-E1 | Hersteller : Vishay Semiconductors |
MOSFET -20V Vds 8V Vgs MICRO FOOT |
auf Bestellung 545 Stücke: Lieferzeit 14-28 Tag (e) |
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SI8823EDB-T2-E1 | Hersteller : Vishay |
Trans MOSFET P-CH 20V 2.7A 4-Pin Micro Foot |
Produkt ist nicht verfügbar |
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| Si8823EDB-T2-E1 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -2.7A; Idm: -15A Mounting: SMD Power dissipation: 0.9W Polarisation: unipolar Kind of package: reel; tape Gate charge: 17nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -15A Drain-source voltage: -20V Drain current: -2.7A On-state resistance: 335mΩ Type of transistor: P-MOSFET Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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Si8823EDB-T2-E1 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 20V 2.7A 4MICRO FOOT Packaging: Tape & Reel (TR) Package / Case: 4-XFBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 1A, 4.5V Power Dissipation (Max): 900mW (Tc) Vgs(th) (Max) @ Id: 800mV @ 250µA Supplier Device Package: 4-MICRO FOOT® (0.8x0.8) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 10 V |
Produkt ist nicht verfügbar |
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| Si8823EDB-T2-E1 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -2.7A; Idm: -15A Mounting: SMD Power dissipation: 0.9W Polarisation: unipolar Kind of package: reel; tape Gate charge: 17nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -15A Drain-source voltage: -20V Drain current: -2.7A On-state resistance: 335mΩ Type of transistor: P-MOSFET |
Produkt ist nicht verfügbar |