Produkte > VISHAY SILICONIX > Si8823EDB-T2-E1
Si8823EDB-T2-E1

Si8823EDB-T2-E1 Vishay Siliconix

si8823edb.pdf Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 2.7A 4MICRO FOOT
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 1A, 4.5V
Power Dissipation (Max): 900mW (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 4-MICRO FOOT® (0.8x0.8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 10 V
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.24 EUR
6000+0.22 EUR
9000+0.21 EUR
15000+0.2 EUR
21000+0.19 EUR
30000+0.18 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details Si8823EDB-T2-E1 Vishay Siliconix

Description: MOSFET P-CH 20V 2.7A 4MICRO FOOT, Packaging: Tape & Reel (TR), Package / Case: 4-XFBGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc), Rds On (Max) @ Id, Vgs: 95mOhm @ 1A, 4.5V, Power Dissipation (Max): 900mW (Tc), Vgs(th) (Max) @ Id: 800mV @ 250µA, Supplier Device Package: 4-MICRO FOOT® (0.8x0.8), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 10 V.

Weitere Produktangebote Si8823EDB-T2-E1 nach Preis ab 0.22 EUR bis 1.04 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
Si8823EDB-T2-E1 Si8823EDB-T2-E1 Hersteller : Vishay Semiconductors si8823edb.pdf MOSFETs -20V Vds 8V Vgs MICRO FOOT
auf Bestellung 16538 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.04 EUR
10+0.65 EUR
100+0.41 EUR
500+0.31 EUR
1000+0.28 EUR
3000+0.24 EUR
6000+0.22 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
Si8823EDB-T2-E1 Si8823EDB-T2-E1 Hersteller : Vishay Siliconix si8823edb.pdf Description: MOSFET P-CH 20V 2.7A 4MICRO FOOT
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 1A, 4.5V
Power Dissipation (Max): 900mW (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 4-MICRO FOOT® (0.8x0.8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 10 V
auf Bestellung 38802 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.04 EUR
28+0.65 EUR
100+0.41 EUR
500+0.31 EUR
1000+0.28 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
Si8823EDB-T2-E1 Hersteller : VISHAY si8823edb.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -2.7A; Idm: -15A
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Case: MICROFOOT®
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -15A
Drain current: -2.7A
Gate charge: 17nC
On-state resistance: 335mΩ
Power dissipation: 0.9W
Gate-source voltage: ±8V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH