SI8851EDB-T2-E1

SI8851EDB-T2-E1

SI8851EDB-T2-E1

Hersteller: Vishay Semiconductors
MOSFET -20V Vds 8V Vgs MICROFOOT
VISH_S_A0001121439_1-2567121.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 43 Stücke
Lieferzeit 14-28 Tag (e)
34+ 1.56 EUR
41+ 1.29 EUR
100+ 1.05 EUR
500+ 0.86 EUR

Technische Details SI8851EDB-T2-E1

Description: MOSFET P-CH 20V PWR MICRO FOOT, Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 8 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Part Status: Active, Supplier Device Package: Power Micro Foot® (2.4x2), Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 660mW (Ta), Rds On (Max) @ Id, Vgs: 8mOhm @ 7A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 30-XFBGA, Packaging: Tape & Reel (TR).

Preis SI8851EDB-T2-E1 ab 0.86 EUR bis 1.56 EUR

SI8851EDB-T2-E1
SI8851EDB-T2-E1
Hersteller: Vishay
Trans MOSFET P-CH 20V 16.7A 30-Pin Power Micro Foot T/R
si8851edb.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI8851EDB-T2-E1
SI8851EDB-T2-E1
Hersteller: VISHAY
Description: VISHAY - SI8851EDB-T2-E1 - MOSFET, P CHANNEL, -20V, -16.7A, MICRO FOOT
Transistormontage: Surface Mount
Drain-Source-Spannung Vds: 20
Dauer-Drainstrom Id: 16.7
Rds(on)-Messspannung Vgs: 4.5
MSL: MSL 1 - Unlimited
Verlustleistung Pd: 3.1
Bauform - Transistor: MICRO FOOT
Anzahl der Pins: 30
Produktpalette: -
Wandlerpolarität: P Channel
Betriebswiderstand, Rds(on): 0.006
Betriebstemperatur, max.: 150
Schwellenspannung Vgs: 1
SVHC: No SVHC (19-Jan-2021)
si8851edb.pdf si8851edb.pdf
188 Stücke
SI8851EDB-T2-E1
SI8851EDB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V PWR MICRO FOOT
Power Dissipation (Max): 660mW (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 30-XFBGA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: Power Micro Foot® (2.4x2)
Vgs(th) (Max) @ Id: 1V @ 250µA
si8851edb.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI8851EDB-T2-E1
SI8851EDB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 7.7A MICRO FOOT
Supplier Device Package: Power Micro Foot®
Package / Case: 30-XFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 660mW
Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 8 mOhm @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
si8851edb.pdf
auf Bestellung 5770 Stücke
Lieferzeit 21-28 Tag (e)
SI8851EDB-T2-E1
SI8851EDB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V PWR MICRO FOOT
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: Power Micro Foot® (2.4x2)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 660mW (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 30-XFBGA
Packaging: Tape & Reel (TR)
si8851edb.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen