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SI8851EDB-T2-E1

SI8851EDB-T2-E1 Vishay Siliconix

si8851edb.pdf Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V PWR MICRO FOOT
Packaging: Tape & Reel (TR)
Package / Case: 30-XFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 7A, 4.5V
Power Dissipation (Max): 660mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: Power Micro Foot® (2.4x2)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 10 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.41 EUR
6000+0.38 EUR
9000+0.36 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SI8851EDB-T2-E1 Vishay Siliconix

Description: MOSFET P-CH 20V PWR MICRO FOOT, Packaging: Tape & Reel (TR), Package / Case: 30-XFBGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta), Rds On (Max) @ Id, Vgs: 8mOhm @ 7A, 4.5V, Power Dissipation (Max): 660mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: Power Micro Foot® (2.4x2), Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 10 V.

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SI8851EDB-T2-E1 SI8851EDB-T2-E1 Hersteller : Vishay Semiconductors VISH_S_A0001121439_1-2567121.pdf MOSFET -20V Vds 8V Vgs MICROFOOT
auf Bestellung 43 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.05 EUR
10+0.87 EUR
100+0.71 EUR
500+0.58 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
SI8851EDB-T2-E1 SI8851EDB-T2-E1 Hersteller : Vishay Siliconix si8851edb.pdf Description: MOSFET P-CH 20V PWR MICRO FOOT
Packaging: Cut Tape (CT)
Package / Case: 30-XFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 7A, 4.5V
Power Dissipation (Max): 660mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: Power Micro Foot® (2.4x2)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 10 V
auf Bestellung 10618 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.64 EUR
17+1.04 EUR
100+0.68 EUR
500+0.52 EUR
1000+0.47 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
SI8851EDB-T2-E1 Hersteller : VISHAY si8851edb.pdf SI8851EDB-T2-E1 SMD P channel transistors
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