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SIA400EDJ-T1-GE3

SIA400EDJ-T1-GE3 Vishay Siliconix


sia400edj.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 12A PPAK SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 11A, 4.5V
Power Dissipation (Max): 19.2W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1265 pF @ 15 V
auf Bestellung 144000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.48 EUR
6000+ 0.46 EUR
9000+ 0.43 EUR
30000+ 0.42 EUR
Mindestbestellmenge: 3000
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Technische Details SIA400EDJ-T1-GE3 Vishay Siliconix

Description: MOSFET N-CH 30V 12A PPAK SC70-6, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SC-70-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 19mOhm @ 11A, 4.5V, Power Dissipation (Max): 19.2W (Tc), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: PowerPAK® SC-70-6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1265 pF @ 15 V.

Weitere Produktangebote SIA400EDJ-T1-GE3 nach Preis ab 0.54 EUR bis 1.43 EUR

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SIA400EDJ-T1-GE3 SIA400EDJ-T1-GE3 Hersteller : Vishay Siliconix sia400edj.pdf Description: MOSFET N-CH 30V 12A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 11A, 4.5V
Power Dissipation (Max): 19.2W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1265 pF @ 15 V
auf Bestellung 151951 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
19+1.43 EUR
22+ 1.22 EUR
100+ 0.85 EUR
500+ 0.66 EUR
1000+ 0.54 EUR
Mindestbestellmenge: 19
SIA400EDJ-T1-GE3 SIA400EDJ-T1-GE3 Hersteller : Vishay / Siliconix sia400edj-66318.pdf MOSFET 30V Vds 12V Vgs PowerPAK SC-70
auf Bestellung 10690 Stücke:
Lieferzeit 14-28 Tag (e)
SIA400EDJ-T1-GE3 SIA400EDJ-T1-GE3 Hersteller : Vishay sia400edj.pdf Trans MOSFET N-CH 30V 12A 6-Pin PowerPAK SC-70 EP T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
SIA400EDJ-T1-GE3 Hersteller : VISHAY sia400edj.pdf SIA400EDJ-T1-GE3 SMD N channel transistors
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