SIA400EDJ-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 12A PPAK SC70-6
Input Capacitance (Ciss) (Max) @ Vds: 1265 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: PowerPAK® SC-70-6
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 19.2W (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 11A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: PowerPAK® SC-70-6
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
| Anzahl | Preis |
|---|---|
| 3000+ | 0.36 EUR |
| 6000+ | 0.33 EUR |
| 9000+ | 0.32 EUR |
| 15000+ | 0.3 EUR |
| 21000+ | 0.29 EUR |
| 30000+ | 0.28 EUR |
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Technische Details SIA400EDJ-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 30V 12A PPAK SC70-6, Input Capacitance (Ciss) (Max) @ Vds: 1265 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Part Status: Active, Supplier Device Package: PowerPAK® SC-70-6, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Power Dissipation (Max): 19.2W (Tc), Rds On (Max) @ Id, Vgs: 19mOhm @ 11A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Package / Case: PowerPAK® SC-70-6, Packaging: Tape & Reel (TR), Mounting Type: Surface Mount.
Weitere Produktangebote SIA400EDJ-T1-GE3 nach Preis ab 0.27 EUR bis 1.48 EUR
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SIA400EDJ-T1-GE3 | Vishay Semiconductors |
MOSFETs 30V Vds 12V Vgs PowerPAK SC-70 |
auf Bestellung 20876 Stücke: Lieferzeit 10-14 Tag (e) |
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SIA400EDJ-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 12A PPAK SC70-6 Input Capacitance (Ciss) (Max) @ Vds: 1265 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Active Supplier Device Package: PowerPAK® SC-70-6 Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 19.2W (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 11A, 4.5V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) FET Type: N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SC-70-6 Packaging: Cut Tape (CT) Technology: MOSFET (Metal Oxide) |
auf Bestellung 149957 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SIA400EDJ-T1-GE3 |
|
Hersteller: Vishay Semiconductors
MOSFETs 30V Vds 12V Vgs PowerPAK SC-70
MOSFETs 30V Vds 12V Vgs PowerPAK SC-70
auf Bestellung 20876 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 1 EUR |
| 10+ | 0.76 EUR |
| 100+ | 0.54 EUR |
| 500+ | 0.42 EUR |
| 1000+ | 0.37 EUR |
| 3000+ | 0.28 EUR |
| 6000+ | 0.27 EUR |
| SIA400EDJ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 12A PPAK SC70-6
Input Capacitance (Ciss) (Max) @ Vds: 1265 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: PowerPAK® SC-70-6
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 19.2W (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 11A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6
Packaging: Cut Tape (CT)
Technology: MOSFET (Metal Oxide)
Description: MOSFET N-CH 30V 12A PPAK SC70-6
Input Capacitance (Ciss) (Max) @ Vds: 1265 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: PowerPAK® SC-70-6
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 19.2W (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 11A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6
Packaging: Cut Tape (CT)
Technology: MOSFET (Metal Oxide)
auf Bestellung 149957 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 12+ | 1.48 EUR |
| 19+ | 0.93 EUR |
| 100+ | 0.6 EUR |
| 500+ | 0.46 EUR |
| 1000+ | 0.42 EUR |