SIA414DJ-T1-GE3

SIA414DJ-T1-GE3

Hersteller: Vishay
Trans MOSFET N-CH 8V 12A 6-Pin PowerPAK SC-70 T/R
sia414dj.pdf sia414dj.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 240 Stücke
Lieferzeit 14-21 Tag (e)
202+ 0.82 EUR
214+ 0.74 EUR
215+ 0.71 EUR

Technische Details SIA414DJ-T1-GE3

Description: MOSFET N-CH 8V 12A PPAK SC70-6, Manufacturer: Vishay Siliconix, Packaging: Tape & Reel (TR), Part Status: Active, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 8V, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Rds On (Max) @ Id, Vgs: 11mOhm @ 9.7A, 4.5V, Vgs(th) (Max) @ Id: 800mV @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V, Vgs (Max): ±5V, Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 4V, Power Dissipation (Max): 3.5W (Ta), 19W (Tc), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Supplier Device Package: Out of Bounds, Package / Case: PowerPAK® SC-70-6, Base Part Number: SIA414.

Preis SIA414DJ-T1-GE3 ab 0.71 EUR bis 2.52 EUR

SIA414DJ-T1-GE3
SIA414DJ-T1-GE3
Hersteller: Vishay Semiconductors
MOSFET 8.0V 12A 19W 11mohm @ 4.5V
sia414dj-1766339.pdf
auf Bestellung 294 Stücke
Lieferzeit 14-28 Tag (e)
21+ 2.52 EUR
23+ 2.28 EUR
100+ 1.78 EUR
500+ 1.47 EUR
SIA414DJ-T1-GE3
Hersteller: Vishay
Trans MOSFET N-CH 8V 12A 6-Pin PowerPAK SC-70 T/R
sia414dj.pdf sia414dj.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIA414DJ-T1-GE3
SIA414DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 8V 12A SC70-6
Vgs (Max): ±5V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.7A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 8V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 4V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
sia414dj.pdf
auf Bestellung 8625 Stücke
Lieferzeit 21-28 Tag (e)
SIA414DJ-T1-GE3
SIA414DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 8V 12A PPAK SC70-6
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.7A, 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V
Vgs (Max): ±5V
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 4V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Out of Bounds
Package / Case: PowerPAK® SC-70-6
Base Part Number: SIA414
sia414dj.pdf
auf Bestellung 13024 Stücke
Lieferzeit 21-28 Tag (e)
SIA414DJ-T1-GE3
SIA414DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 8V 12A PPAK SC70-6
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.7A, 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V
Vgs (Max): ±5V
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 4V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Out of Bounds
Package / Case: PowerPAK® SC-70-6
Base Part Number: SIA414
sia414dj.pdf
auf Bestellung 12000 Stücke
Lieferzeit 21-28 Tag (e)