SIA414DJ-T1-GE3
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 240 Stücke
Lieferzeit 14-21 Tag (e)
auf Bestellung 240 Stücke
Lieferzeit 14-21 Tag (e)
Technische Details SIA414DJ-T1-GE3
Description: MOSFET N-CH 8V 12A PPAK SC70-6, Manufacturer: Vishay Siliconix, Packaging: Tape & Reel (TR), Part Status: Active, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 8V, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Rds On (Max) @ Id, Vgs: 11mOhm @ 9.7A, 4.5V, Vgs(th) (Max) @ Id: 800mV @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V, Vgs (Max): ±5V, Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 4V, Power Dissipation (Max): 3.5W (Ta), 19W (Tc), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Supplier Device Package: Out of Bounds, Package / Case: PowerPAK® SC-70-6, Base Part Number: SIA414.
Preis SIA414DJ-T1-GE3 ab 0.71 EUR bis 2.52 EUR
 Hersteller: Vishay Semiconductors MOSFET 8.0V 12A 19W 11mohm @ 4.5V 
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auf Bestellung 294 Stücke Lieferzeit 14-28 Tag (e) |
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SIA414DJ-T1-GE3 Hersteller: Vishay Trans MOSFET N-CH 8V 12A 6-Pin PowerPAK SC-70 T/R
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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 Hersteller: Vishay Siliconix Description: MOSFET N-CH 8V 12A SC70-6 Vgs (Max): ±5V Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V Vgs(th) (Max) @ Id: 800mV @ 250µA Rds On (Max) @ Id, Vgs: 11mOhm @ 9.7A, 4.5V Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drain to Source Voltage (Vdss): 8V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 4V Power Dissipation (Max): 3.5W (Ta), 19W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SC-70-6 Single Package / Case: PowerPAK® SC-70-6
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auf Bestellung 8625 Stücke Lieferzeit 21-28 Tag (e) |
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 Hersteller: Vishay Siliconix Description: MOSFET N-CH 8V 12A PPAK SC70-6 Manufacturer: Vishay Siliconix Packaging: Cut Tape (CT) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Rds On (Max) @ Id, Vgs: 11mOhm @ 9.7A, 4.5V Vgs(th) (Max) @ Id: 800mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V Vgs (Max): ±5V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 4V Power Dissipation (Max): 3.5W (Ta), 19W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Out of Bounds Package / Case: PowerPAK® SC-70-6 Base Part Number: SIA414
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auf Bestellung 13024 Stücke Lieferzeit 21-28 Tag (e) |
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Hersteller: Vishay Siliconix Description: MOSFET N-CH 8V 12A PPAK SC70-6 Manufacturer: Vishay Siliconix Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Rds On (Max) @ Id, Vgs: 11mOhm @ 9.7A, 4.5V Vgs(th) (Max) @ Id: 800mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V Vgs (Max): ±5V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 4V Power Dissipation (Max): 3.5W (Ta), 19W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Out of Bounds Package / Case: PowerPAK® SC-70-6 Base Part Number: SIA414
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auf Bestellung 12000 Stücke Lieferzeit 21-28 Tag (e) |
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