SIA414DJ-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 8V 12A PPAK SC70-6
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 4 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V
Drain to Source Voltage (Vdss): 8 V
Vgs (Max): ±5V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Supplier Device Package: PowerPAK® SC-70-6
Vgs(th) (Max) @ Id: 800mV @ 250µA
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Technische Details SIA414DJ-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 8V 12A PPAK SC70-6, Power Dissipation (Max): 3.5W (Ta), 19W (Tc), Rds On (Max) @ Id, Vgs: 11mOhm @ 9.7A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SC-70-6, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 4 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V, Drain to Source Voltage (Vdss): 8 V, Vgs (Max): ±5V, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Supplier Device Package: PowerPAK® SC-70-6, Vgs(th) (Max) @ Id: 800mV @ 250µA.
Weitere Produktangebote SIA414DJ-T1-GE3 nach Preis ab 0.63 EUR bis 1.23 EUR
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SIA414DJ-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 8V 12A PPAK SC70-6 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SC-70-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 9.7A, 4.5V Power Dissipation (Max): 3.5W (Ta), 19W (Tc) Vgs(th) (Max) @ Id: 800mV @ 250µA Supplier Device Package: PowerPAK® SC-70-6 Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±5V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 4 V |
auf Bestellung 17033 Stücke: Lieferzeit 10-14 Tag (e) |
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SIA414DJ-T1-GE3 | Vishay Semiconductors |
MOSFET 8.0V 12A 19W 11mohm @ 4.5V |
auf Bestellung 37948 Stücke: Lieferzeit 10-14 Tag (e) |
|
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| SIA414DJ-T1-GE3 | Vishay |
Trans MOSFET N-CH 8V 12A 6-Pin PowerPAK SC-70 T/R |
auf Bestellung 240 Stücke: Lieferzeit 14-21 Tag (e) |
|
| SIA414DJ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 8V 12A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.7A, 4.5V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 4 V
Description: MOSFET N-CH 8V 12A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.7A, 4.5V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 4 V
auf Bestellung 17033 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 18+ | 1.19 EUR |
| 22+ | 0.98 EUR |
| 100+ | 0.76 EUR |
| 500+ | 0.64 EUR |
| 1000+ | 0.63 EUR |
| SIA414DJ-T1-GE3 |
|
Hersteller: Vishay Semiconductors
MOSFET 8.0V 12A 19W 11mohm @ 4.5V
MOSFET 8.0V 12A 19W 11mohm @ 4.5V
auf Bestellung 37948 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.23 EUR |
| 10+ | 1.01 EUR |
| 100+ | 0.79 EUR |
| 500+ | 0.68 EUR |
| SIA414DJ-T1-GE3 |
|
Hersteller: Vishay
Trans MOSFET N-CH 8V 12A 6-Pin PowerPAK SC-70 T/R
Trans MOSFET N-CH 8V 12A 6-Pin PowerPAK SC-70 T/R
auf Bestellung 240 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 202+ | 0.87 EUR |
| 214+ | 0.79 EUR |
| 215+ | 0.75 EUR |