SIA431DJ-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET P-CH 20V 12A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6.5A, 4.5V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 850mV @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 10 V
auf Bestellung 2434 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 19+ | 1.38 EUR |
| 23+ | 1.18 EUR |
| 100+ | 0.82 EUR |
| 500+ | 0.68 EUR |
| 1000+ | 0.58 EUR |
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Technische Details SIA431DJ-T1-GE3 Vishay Siliconix
Description: MOSFET P-CH 20V 12A PPAK SC70-6, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SC-70-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 25mOhm @ 6.5A, 4.5V, Power Dissipation (Max): 3.5W (Ta), 19W (Tc), Vgs(th) (Max) @ Id: 850mV @ 250µA, Supplier Device Package: PowerPAK® SC-70-6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 10 V.
Weitere Produktangebote SIA431DJ-T1-GE3 nach Preis ab 0.6 EUR bis 1.38 EUR
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SIA431DJ-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFET -20V Vds 8V Vgs PowerPAK SC-70 |
auf Bestellung 100133 Stücke: Lieferzeit 14-28 Tag (e) |
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SIA431DJ-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 20V 12A 6-Pin PowerPAK SC-70 T/R |
Produkt ist nicht verfügbar |
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| SIA431DJ-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -12A; Idm: -30A; 12W Case: PowerPAK® SC70 Mounting: SMD Kind of package: reel; tape Drain current: -12A Drain-source voltage: -20V Power dissipation: 12W Polarisation: unipolar Gate charge: 60nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -30A On-state resistance: 25mΩ Type of transistor: P-MOSFET Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SIA431DJ-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 20V 12A PPAK SC70-6 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SC-70-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 6.5A, 4.5V Power Dissipation (Max): 3.5W (Ta), 19W (Tc) Vgs(th) (Max) @ Id: 850mV @ 250µA Supplier Device Package: PowerPAK® SC-70-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 10 V |
Produkt ist nicht verfügbar |
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| SIA431DJ-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -12A; Idm: -30A; 12W Case: PowerPAK® SC70 Mounting: SMD Kind of package: reel; tape Drain current: -12A Drain-source voltage: -20V Power dissipation: 12W Polarisation: unipolar Gate charge: 60nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -30A On-state resistance: 25mΩ Type of transistor: P-MOSFET |
Produkt ist nicht verfügbar |