SIA450DJ-T1-GE3

SIA450DJ-T1-GE3

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Technische Details SIA450DJ-T1-GE3

Description: MOSFET N-CH 240V 1.52A SC70-6, Supplier Device Package: PowerPAK® SC-70-6 Single, Package / Case: PowerPAK® SC-70-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 15W, Input Capacitance (Ciss) (Max) @ Vds: 167pF @ 120V, FET Type: MOSFET N-Channel, Metal Oxide, Gate Charge (Qg) (Max) @ Vgs: 7.04nC @ 10V, Vgs(th) (Max) @ Id: 2.4V @ 250µA, Rds On (Max) @ Id, Vgs: 2.9 Ohm @ 700mA, 10V, Current - Continuous Drain (Id) @ 25°C: 1.52A (Tc), Drain to Source Voltage (Vdss): 240V.

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SIA450DJ-T1-GE3
SIA450DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 240V 1.52A SC70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 15W
Input Capacitance (Ciss) (Max) @ Vds: 167pF @ 120V
FET Type: MOSFET N-Channel, Metal Oxide
Gate Charge (Qg) (Max) @ Vgs: 7.04nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 2.9 Ohm @ 700mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.52A (Tc)
Drain to Source Voltage (Vdss): 240V
sia450dj.pdf
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