SIA450DJ-T1-GE3
SIA450DJ-T1-GE3
Hersteller:
verfügbar/auf Bestellung
3000 Stücke
3000 Stücke
Technische Details SIA450DJ-T1-GE3
Description: MOSFET N-CH 240V 1.52A SC70-6, Supplier Device Package: PowerPAK® SC-70-6 Single, Package / Case: PowerPAK® SC-70-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 15W, Input Capacitance (Ciss) (Max) @ Vds: 167pF @ 120V, FET Type: MOSFET N-Channel, Metal Oxide, Gate Charge (Qg) (Max) @ Vgs: 7.04nC @ 10V, Vgs(th) (Max) @ Id: 2.4V @ 250µA, Rds On (Max) @ Id, Vgs: 2.9 Ohm @ 700mA, 10V, Current - Continuous Drain (Id) @ 25°C: 1.52A (Tc), Drain to Source Voltage (Vdss): 240V.
Preis SIA450DJ-T1-GE3 ab 0 EUR bis 0 EUR
 Hersteller: Vishay Siliconix Description: MOSFET N-CH 240V 1.52A SC70-6 Supplier Device Package: PowerPAK® SC-70-6 Single Package / Case: PowerPAK® SC-70-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 15W Input Capacitance (Ciss) (Max) @ Vds: 167pF @ 120V FET Type: MOSFET N-Channel, Metal Oxide Gate Charge (Qg) (Max) @ Vgs: 7.04nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Rds On (Max) @ Id, Vgs: 2.9 Ohm @ 700mA, 10V Current - Continuous Drain (Id) @ 25°C: 1.52A (Tc) Drain to Source Voltage (Vdss): 240V
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