SIA468DJ-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 30V 37.8A PPAK SC70
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37.8A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 11A, 10V
Power Dissipation (Max): 19W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 15 V
auf Bestellung 3023 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 16+ | 1.16 EUR |
| 18+ | 1 EUR |
| 100+ | 0.75 EUR |
| 500+ | 0.59 EUR |
| 1000+ | 0.45 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SIA468DJ-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 30V 37.8A PPAK SC70, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SC-70-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 37.8A (Tc), Rds On (Max) @ Id, Vgs: 8.4mOhm @ 11A, 10V, Power Dissipation (Max): 19W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: PowerPAK® SC-70-6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +20V, -16V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 15 V.
Weitere Produktangebote SIA468DJ-T1-GE3 nach Preis ab 0.5 EUR bis 1.54 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SIA468DJ-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFET 30V Vds 20V Vgs PowerPAK SC-70 |
auf Bestellung 78661 Stücke: Lieferzeit 14-28 Tag (e) |
|
||||||||||||||||
 |
SIA468DJ-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 16.1A 6-Pin PowerPAK SC-70 EP T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||||
| SIA468DJ-T1-GE3 | Hersteller : VISHAY |
SIA468DJ-T1-GE3 SMD N channel transistors |
Produkt ist nicht verfügbar |
||||||||||||||||||
|
|
SIA468DJ-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 37.8A PPAK SC70 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SC-70-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37.8A (Tc) Rds On (Max) @ Id, Vgs: 8.4mOhm @ 11A, 10V Power Dissipation (Max): 19W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: PowerPAK® SC-70-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 15 V |
Produkt ist nicht verfügbar |