SIA468DJ-T1-GE3

SIA468DJ-T1-GE3

SIA468DJ-T1-GE3

Hersteller: Vishay Semiconductors
MOSFET 30V Vds 20V Vgs PowerPAK SC-70
sia468dj-1764992.pdf
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auf Bestellung 7899 Stücke
Lieferzeit 14-28 Tag (e)

Technische Details SIA468DJ-T1-GE3

Description: MOSFET N-CH 30V 37.8A SC70-6, Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V, Vgs(th) (Max) @ Id: 2.4V @ 250µA, Package / Case: PowerPAK® SC-70-6, Supplier Device Package: PowerPAK® SC-70-6 Single, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 19W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 15V, Vgs (Max): +20V, -16V, Rds On (Max) @ Id, Vgs: 8.4mOhm @ 11A, 10V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Current - Continuous Drain (Id) @ 25°C: 37.8A (Tc), Drain to Source Voltage (Vdss): 30V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $).

Preis SIA468DJ-T1-GE3 ab 0 EUR bis 0 EUR

SIA468DJ-T1-GE3
SIA468DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 37.8A SC70-6
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 19W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 15V
Vgs (Max): +20V, -16V
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 37.8A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
sia468dj.pdf
auf Bestellung 10365 Stücke
Lieferzeit 21-28 Tag (e)
SIA468DJ-T1-GE3
SIA468DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 37.8A PPAK SC70
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 37.8A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Base Part Number: SIA468
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 19W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 15V
Vgs (Max): +20V, -16V
Part Status: Active
Packaging: Tape & Reel (TR)
sia468dj.pdf
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
SIA468DJ-T1-GE3
SIA468DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 37.8A PPAK SC70
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 37.8A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Base Part Number: SIA468
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Mounting Type: Surface Mount
Part Status: Active
Packaging: Cut Tape (CT)
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 19W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 15V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
sia468dj.pdf
auf Bestellung 4818 Stücke
Lieferzeit 21-28 Tag (e)