SIA468DJ-T1-GE3 Vishay Semiconductors
auf Bestellung 78661 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3+ | 1.05 EUR |
10+ | 0.9 EUR |
100+ | 0.67 EUR |
500+ | 0.53 EUR |
1000+ | 0.41 EUR |
3000+ | 0.37 EUR |
6000+ | 0.34 EUR |
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Technische Details SIA468DJ-T1-GE3 Vishay Semiconductors
Description: MOSFET N-CH 30V 37.8A PPAK SC70, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SC-70-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 37.8A (Tc), Rds On (Max) @ Id, Vgs: 8.4mOhm @ 11A, 10V, Power Dissipation (Max): 19W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: PowerPAK® SC-70-6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +20V, -16V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 15 V.
Weitere Produktangebote SIA468DJ-T1-GE3 nach Preis ab 0.45 EUR bis 1.16 EUR
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SIA468DJ-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 37.8A PPAK SC70 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SC-70-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37.8A (Tc) Rds On (Max) @ Id, Vgs: 8.4mOhm @ 11A, 10V Power Dissipation (Max): 19W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: PowerPAK® SC-70-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 15 V |
auf Bestellung 3023 Stücke: Lieferzeit 10-14 Tag (e) |
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SIA468DJ-T1-GE3 | Hersteller : Vishay | Trans MOSFET N-CH 30V 16.1A 6-Pin PowerPAK SC-70 EP T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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SIA468DJ-T1-GE3 | Hersteller : VISHAY | SIA468DJ-T1-GE3 SMD N channel transistors |
Produkt ist nicht verfügbar |
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SIA468DJ-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 37.8A PPAK SC70 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SC-70-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37.8A (Tc) Rds On (Max) @ Id, Vgs: 8.4mOhm @ 11A, 10V Power Dissipation (Max): 19W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: PowerPAK® SC-70-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 15 V |
Produkt ist nicht verfügbar |