SIA468DJ-T1-GE3 Vishay Semiconductors
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.25 EUR |
| 10+ | 1.07 EUR |
| 100+ | 0.8 EUR |
| 500+ | 0.63 EUR |
| 1000+ | 0.49 EUR |
| 3000+ | 0.44 EUR |
| 6000+ | 0.4 EUR |
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Technische Details SIA468DJ-T1-GE3 Vishay Semiconductors
Description: MOSFET N-CH 30V 37.8A PPAK SC70, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SC-70-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 37.8A (Tc), Rds On (Max) @ Id, Vgs: 8.4mOhm @ 11A, 10V, Power Dissipation (Max): 19W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: PowerPAK® SC-70-6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +20V, -16V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 15 V.
Weitere Produktangebote SIA468DJ-T1-GE3 nach Preis ab 0.54 EUR bis 1.38 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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SIA468DJ-T1-GE3 | Vishay Siliconix |
 Description: MOSFET N-CH 30V 37.8A PPAK SC70Packaging: Cut Tape (CT) Package / Case: PowerPAK® SC-70-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37.8A (Tc) Rds On (Max) @ Id, Vgs: 8.4mOhm @ 11A, 10V Power Dissipation (Max): 19W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: PowerPAK® SC-70-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 15 V |
auf Bestellung 3023 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIA468DJ-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 37.8A PPAK SC70
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37.8A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 11A, 10V
Power Dissipation (Max): 19W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 15 V
Description: MOSFET N-CH 30V 37.8A PPAK SC70
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37.8A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 11A, 10V
Power Dissipation (Max): 19W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 15 V
auf Bestellung 3023 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 16+ | 1.38 EUR |
| 18+ | 1.19 EUR |
| 100+ | 0.89 EUR |
| 500+ | 0.7 EUR |
| 1000+ | 0.54 EUR |