SIA811ADJ-T1-GE3

SIA811ADJ-T1-GE3

SIA811ADJ-T1-GE3

Hersteller: Vishay / Siliconix
MOSFET -20V Vds 8V Vgs PowerPAK SC-70
sia811-279998.pdf
verfügbar/auf Bestellung
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen

Technische Details SIA811ADJ-T1-GE3

Description: MOSFET P-CH 20V 4.5A PPAK SC70-6, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SC-70-6 Dual, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc), Rds On (Max) @ Id, Vgs: 116mOhm @ 2.8A, 4.5V, FET Feature: Schottky Diode (Isolated), Power Dissipation (Max): 1.8W (Ta), 6.5W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: PowerPAK® SC-70-6 Dual, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 10 V.

Preis SIA811ADJ-T1-GE3 ab 0 EUR bis 0 EUR

SIA811ADJ-T1-GE3
SIA811ADJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4.5A PPAK SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 116mOhm @ 2.8A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.8W (Ta), 6.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 10 V
sia811adj.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIA811ADJ-T1-GE3
SIA811ADJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4.5A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 116mOhm @ 2.8A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.8W (Ta), 6.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 10 V
sia811adj.pdf
auf Bestellung 2879 Stücke
Lieferzeit 21-28 Tag (e)