SIA811ADJ-T1-GE3 Vishay Semiconductors
auf Bestellung 2769 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 0.87 EUR |
| 10+ | 0.74 EUR |
| 100+ | 0.52 EUR |
| 500+ | 0.40 EUR |
| 1000+ | 0.33 EUR |
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Technische Details SIA811ADJ-T1-GE3 Vishay Semiconductors
Description: MOSFET P-CH 20V 4.5A PPAK SC70-6, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SC-70-6 Dual, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc), Rds On (Max) @ Id, Vgs: 116mOhm @ 2.8A, 4.5V, FET Feature: Schottky Diode (Isolated), Power Dissipation (Max): 1.8W (Ta), 6.5W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: PowerPAK® SC-70-6 Dual, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 10 V.
Weitere Produktangebote SIA811ADJ-T1-GE3 nach Preis ab 0.38 EUR bis 1.37 EUR
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SIA811ADJ-T1-GE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET P-CH 20V 4.5A PPAK SC70-6Packaging: Cut Tape (CT) Package / Case: PowerPAK® SC-70-6 Dual Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 116mOhm @ 2.8A, 4.5V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.8W (Ta), 6.5W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: PowerPAK® SC-70-6 Dual Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 10 V |
auf Bestellung 2751 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIA811ADJ-T1-GE3 | Hersteller : VISHAY |
SIA811ADJ-T1-GE3 SMD P channel transistors |
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SIA811ADJ-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 20V 4.5A PPAK SC70-6 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SC-70-6 Dual Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 116mOhm @ 2.8A, 4.5V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.8W (Ta), 6.5W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: PowerPAK® SC-70-6 Dual Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 10 V |
Produkt ist nicht verfügbar |
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SIA811ADJ-T1-GE3 | Hersteller : Vishay / Siliconix |
MOSFET -20V Vds 8V Vgs PowerPAK SC-70 |
Produkt ist nicht verfügbar |