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SiA928DJ-T1-GE3

SiA928DJ-T1-GE3 Vishay / Siliconix


sia928dj.pdf Hersteller: Vishay / Siliconix
MOSFET Dual N-Ch 30V Vds 3nC Qg Typ
auf Bestellung 13271 Stücke:

Lieferzeit 1058-1072 Tag (e)
Anzahl Preis ohne MwSt
48+1.09 EUR
55+ 0.95 EUR
100+ 0.71 EUR
500+ 0.56 EUR
1000+ 0.49 EUR
9000+ 0.48 EUR
24000+ 0.46 EUR
Mindestbestellmenge: 48
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Technische Details SiA928DJ-T1-GE3 Vishay / Siliconix

Description: MOSFET 2N-CH 30V 4.5A SC70-6, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SC-70-6 Dual, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 7.8W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 15V, Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: PowerPAK® SC-70-6 Dual, Part Status: Active.

Weitere Produktangebote SiA928DJ-T1-GE3

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SIA928DJ-T1-GE3 SIA928DJ-T1-GE3 Hersteller : Vishay sia928dj.pdf Trans MOSFET N-CH 30V 4.5A 6-Pin PowerPAK SC-70 EP T/R
Produkt ist nicht verfügbar
SiA928DJ-T1-GE3 Hersteller : VISHAY sia928dj.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 4.5A; Idm: 30A
Mounting: SMD
Kind of package: reel; tape
Drain current: 4.5A
Power dissipation: 7.8W
Drain-source voltage: 30V
Polarisation: unipolar
Gate charge: 10nC
Technology: TrenchFET®
Kind of channel: enhanced
Type of transistor: N-MOSFET x2
Pulsed drain current: 30A
On-state resistance: 33mΩ
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SiA928DJ-T1-GE3 SiA928DJ-T1-GE3 Hersteller : Vishay Siliconix sia928dj.pdf Description: MOSFET 2N-CH 30V 4.5A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 7.8W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 15V
Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Active
Produkt ist nicht verfügbar
SiA928DJ-T1-GE3 SiA928DJ-T1-GE3 Hersteller : Vishay Siliconix sia928dj.pdf Description: MOSFET 2N-CH 30V 4.5A SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 7.8W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 15V
Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Active
Produkt ist nicht verfügbar
SiA928DJ-T1-GE3 Hersteller : VISHAY sia928dj.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 4.5A; Idm: 30A
Mounting: SMD
Kind of package: reel; tape
Drain current: 4.5A
Power dissipation: 7.8W
Drain-source voltage: 30V
Polarisation: unipolar
Gate charge: 10nC
Technology: TrenchFET®
Kind of channel: enhanced
Type of transistor: N-MOSFET x2
Pulsed drain current: 30A
On-state resistance: 33mΩ
Produkt ist nicht verfügbar