SIA928DJ-T1-GE3

SIA928DJ-T1-GE3

SIA928DJ-T1-GE3

Hersteller: Vishay
Trans MOSFET N-CH 30V 4.5A 6-Pin PowerPAK SC-70 EP T/R
sia928dj.pdf
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Technische Details SIA928DJ-T1-GE3

Description: MOSFET 2N-CH 30V POWERPAK SC70-6, Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V, Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc), Drain to Source Voltage (Vdss): 30V, FET Feature: Standard, FET Type: 2 N-Channel (Dual), Part Status: Active, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $), Base Part Number: SIA928, Supplier Device Package: PowerPAK® SC-70-6 Dual, Package / Case: PowerPAK® SC-70-6 Dual, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 7.8W, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 15V.

Preis SIA928DJ-T1-GE3 ab 0 EUR bis 0 EUR

SIA928DJ-T1-GE3
SIA928DJ-T1-GE3
Hersteller: Vishay / Siliconix
MOSFET Dual N-Ch 30V Vds 3nC Qg Typ
sia928dj-1766172.pdf
auf Bestellung 12816 Stücke
Lieferzeit 14-28 Tag (e)
SIA928DJ-T1-GE3
SIA928DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V POWERPAK SC70-6
Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SIA928
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 7.8W
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 15V
sia928dj.pdf
auf Bestellung 1515 Stücke
Lieferzeit 21-28 Tag (e)
SIA928DJ-T1-GE3
SIA928DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V POWERPAK SC70-6
Part Status: Active
Supplier Device Package: PowerPAK® SC-70-6 Dual
Vgs(th) (Max) @ Id: 2.2V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Drain to Source Voltage (Vdss): 30V
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 7.8W
FET Type: 2 N-Channel (Dual)
Packaging: Tape & Reel (TR)
sia928dj.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIA928DJ-T1-GE3
SIA928DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V POWERPAK SC70-6
Part Status: Active
Supplier Device Package: PowerPAK® SC-70-6 Dual
Vgs(th) (Max) @ Id: 2.2V @ 250µA
FET Feature: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6 Dual
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Dual)
Power - Max: 7.8W
sia928dj.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen