SiA928DJ-T1-GE3 Vishay / Siliconix
auf Bestellung 9902 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 0.64 EUR |
| 10+ | 0.47 EUR |
| 100+ | 0.38 EUR |
| 500+ | 0.34 EUR |
| 1000+ | 0.3 EUR |
| 3000+ | 0.27 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SiA928DJ-T1-GE3 Vishay / Siliconix
Description: MOSFET 2N-CH 30V 4.5A PPAK8X8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SC-70-6 Dual, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 7.8W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 15V, Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: PowerPAK® SC-70-6 Dual, Part Status: Active.
Weitere Produktangebote SiA928DJ-T1-GE3 nach Preis ab 0.3 EUR bis 0.65 EUR
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SiA928DJ-T1-GE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET 2N-CH 30V 4.5A PPAK8X8Packaging: Cut Tape (CT) Package / Case: PowerPAK® SC-70-6 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 7.8W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 15V Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PowerPAK® SC-70-6 Dual Part Status: Active |
auf Bestellung 1297 Stücke: Lieferzeit 10-14 Tag (e) |
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SIA928DJ-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 4.5A 6-Pin PowerPAK SC-70 EP T/R |
Produkt ist nicht verfügbar |
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| SiA928DJ-T1-GE3 | Hersteller : VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 4.5A; Idm: 30A Case: PowerPAK® SC70 Mounting: SMD Kind of package: reel; tape Drain current: 4.5A Power dissipation: 7.8W Pulsed drain current: 30A Drain-source voltage: 30V Kind of channel: enhancement Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Gate charge: 10nC On-state resistance: 33mΩ Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SiA928DJ-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 30V 4.5A PPAK8X8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SC-70-6 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 7.8W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 15V Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PowerPAK® SC-70-6 Dual Part Status: Active |
Produkt ist nicht verfügbar |
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| SiA928DJ-T1-GE3 | Hersteller : VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 4.5A; Idm: 30A Case: PowerPAK® SC70 Mounting: SMD Kind of package: reel; tape Drain current: 4.5A Power dissipation: 7.8W Pulsed drain current: 30A Drain-source voltage: 30V Kind of channel: enhancement Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Gate charge: 10nC On-state resistance: 33mΩ |
Produkt ist nicht verfügbar |