SIAA02DJ-T1-GE3

SIAA02DJ-T1-GE3

SIAA02DJ-T1-GE3

Hersteller: Vishay Semiconductors
MOSFET 20-V (D-S) MOSFET N-CHANNEL PowerPAK
siaa02dj-1766905.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 2177 Stücke
Lieferzeit 14-28 Tag (e)
32+ 1.64 EUR
38+ 1.4 EUR
100+ 1.04 EUR
500+ 0.84 EUR

Technische Details SIAA02DJ-T1-GE3

Description: MOSFET N-CH 20V 22A/52A PPAK, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 52A (Tc), Drain to Source Voltage (Vdss): 20V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Packaging: Tape & Reel (TR), Manufacturer: Vishay Siliconix, Base Part Number: SIAA02, Package / Case: PowerPAK® SC-70-6, Supplier Device Package: Out of Bounds, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 3.5W (Ta), 19W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 10V, Vgs (Max): +12V, -8V, Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V, Vgs(th) (Max) @ Id: 1.6V @ 250µA, Rds On (Max) @ Id, Vgs: 4.7mOhm @ 8A, 10V.

Preis SIAA02DJ-T1-GE3 ab 0.84 EUR bis 1.64 EUR

SIAA02DJ-T1-GE3
SIAA02DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 22A/52A PPAK
Base Part Number: SIAA02
Package / Case: PowerPAK® SC-70-6
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Supplier Device Package: Out of Bounds
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 10V
Vgs (Max): +12V, -8V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 52A (Tc)
Drain to Source Voltage (Vdss): 20V
siaa02dj.pdf
auf Bestellung 7611 Stücke
Lieferzeit 21-28 Tag (e)
SIAA02DJ-T1-GE3
SIAA02DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 22A/52A PPAK
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 52A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SIAA02
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: Out of Bounds
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 10V
Vgs (Max): +12V, -8V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 8A, 10V
siaa02dj.pdf
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)