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SIDR390DP-T1-GE3

SIDR390DP-T1-GE3 Vishay Siliconix

sidr390dp.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 69.9A/100A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 69.9A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10180 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+2.59 EUR
Mindestbestellmenge: 3000
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Technische Details SIDR390DP-T1-GE3 Vishay Siliconix

Description: MOSFET N-CH 30V 69.9A/100A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 69.9A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 0.8mOhm @ 20A, 10V, Power Dissipation (Max): 6.25W (Ta), 125W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: PowerPAK® SO-8DC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +20V, -16V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10180 pF @ 15 V.

Weitere Produktangebote SIDR390DP-T1-GE3 nach Preis ab 2.59 EUR bis 5.75 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
SIDR390DP-T1-GE3 SIDR390DP-T1-GE3 Hersteller : Vishay Semiconductors sidr390dp.pdf MOSFET 30V Vds 20V Vgs PowerPAK SO-8DC
auf Bestellung 1846 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
12+4.65 EUR
14+ 3.98 EUR
100+ 3.35 EUR
250+ 3.28 EUR
500+ 2.96 EUR
1000+ 2.65 EUR
3000+ 2.59 EUR
Mindestbestellmenge: 12
SIDR390DP-T1-GE3 SIDR390DP-T1-GE3 Hersteller : Vishay Siliconix sidr390dp.pdf Description: MOSFET N-CH 30V 69.9A/100A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 69.9A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10180 pF @ 15 V
auf Bestellung 4987 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5+5.75 EUR
10+ 4.77 EUR
100+ 3.8 EUR
500+ 3.21 EUR
1000+ 2.73 EUR
Mindestbestellmenge: 5
SIDR390DP-T1-GE3 Hersteller : VISHAY sidr390dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
SIDR390DP-T1-GE3 Hersteller : VISHAY sidr390dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar