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SIDR390DP-T1-GE3

SIDR390DP-T1-GE3 Vishay Siliconix

sidr390dp.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 69.9A/100A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 69.9A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10180 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.55 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SIDR390DP-T1-GE3 Vishay Siliconix

Description: MOSFET N-CH 30V 69.9A/100A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 69.9A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 0.8mOhm @ 20A, 10V, Power Dissipation (Max): 6.25W (Ta), 125W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: PowerPAK® SO-8DC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +20V, -16V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10180 pF @ 15 V.

Weitere Produktangebote SIDR390DP-T1-GE3 nach Preis ab 1.75 EUR bis 2.60 EUR

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SIDR390DP-T1-GE3 SIDR390DP-T1-GE3 Hersteller : Vishay Siliconix sidr390dp.pdf Description: MOSFET N-CH 30V 69.9A/100A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 69.9A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10180 pF @ 15 V
auf Bestellung 5500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.41 EUR
10+2.02 EUR
100+1.90 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
SIDR390DP-T1-GE3 SIDR390DP-T1-GE3 Hersteller : Vishay Semiconductors sidr390dp.pdf MOSFETs 30V Vds 20V Vgs PowerPAK SO-8DC
auf Bestellung 1156 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.60 EUR
10+2.18 EUR
100+2.02 EUR
500+1.97 EUR
1000+1.94 EUR
3000+1.75 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
SIDR390DP-T1-GE3 Hersteller : VISHAY sidr390dp.pdf SIDR390DP-T1-GE3 SMD N channel transistors
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