auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 6000+ | 1.7 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SIDR668DP-T1-GE3 Vishay
Description: MOSFET N-CH 100V 23.2A/95A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 23.2A (Ta), 95A (Tc), Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V, Power Dissipation (Max): 6.25W (Ta), 125W (Tc), Vgs(th) (Max) @ Id: 3.4V @ 250µA, Supplier Device Package: PowerPAK® SO-8DC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 50 V.
Weitere Produktangebote SIDR668DP-T1-GE3 nach Preis ab 1.72 EUR bis 4.73 EUR
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SIDR668DP-T1-GE3 | Hersteller : Vishay |
 Trans MOSFET N-CH 100V 23.2A 8-Pin PowerPAK SO-DC EP T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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SIDR668DP-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 100V 23.2A/95A PPAK Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23.2A (Ta), 95A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 50 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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SIDR668DP-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFETs 100V Vds 20V Vgs PowerPAK SO-8DC |
auf Bestellung 52822 Stücke: Lieferzeit 10-14 Tag (e) |
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SIDR668DP-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 100V 23.2A/95A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23.2A (Ta), 95A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 50 V |
auf Bestellung 9552 Stücke: Lieferzeit 10-14 Tag (e) |
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SIDR668DP-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 100V 23.2A 8-Pin PowerPAK SO-DC EP T/R |
Produkt ist nicht verfügbar |
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| SIDR668DP-T1-GE3 | Hersteller : VISHAY |
SIDR668DP-T1-GE3 SMD N channel transistors |
Produkt ist nicht verfügbar |