SIDR668DP-T1-GE3

SIDR668DP-T1-GE3

SIDR668DP-T1-GE3

Hersteller: Vishay Semiconductors
MOSFET 100V Vds 20V Vgs PowerPAK SO-8DC
sidr668dp-1766763.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 181 Stücke
Lieferzeit 14-28 Tag (e)
7+ 7.7 EUR
10+ 6.68 EUR
25+ 5.3 EUR
100+ 4.45 EUR

Technische Details SIDR668DP-T1-GE3

Description: MOSFET N-CH 100V 23.2A/95A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 23.2A (Ta), 95A (Tc), Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V, Power Dissipation (Max): 6.25W (Ta), 125W (Tc), Vgs(th) (Max) @ Id: 3.4V @ 250µA, Supplier Device Package: PowerPAK® SO-8DC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 50 V.

Preis SIDR668DP-T1-GE3 ab 4.45 EUR bis 7.7 EUR

SIDR668DP-T1-GE3
SIDR668DP-T1-GE3
Hersteller: Vishay
N-Channel 100 V (D-S) MOSFET
sidr668dp.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIDR668DP-T1-GE3
SIDR668DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 23.2A/95A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23.2A (Ta), 95A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 50 V
sidr668dp.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIDR668DP-T1-GE3
SIDR668DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 23.2A/95A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23.2A (Ta), 95A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 50 V
sidr668dp.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen