SIDR668DP-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 23.2A/95A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 23.2A (Ta), 95A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Produktrezensionen
Produktbewertung abgeben
Technische Details SIDR668DP-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 100V 23.2A/95A PPAK, Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Part Status: Active, Supplier Device Package: PowerPAK® SO-8DC, Vgs(th) (Max) @ Id: 3.4V @ 250µA, Power Dissipation (Max): 6.25W (Ta), 125W (Tc), Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 23.2A (Ta), 95A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR).
Weitere Produktangebote SIDR668DP-T1-GE3 nach Preis ab 2.2 EUR bis 6.83 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
SIDR668DP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 100V 23.2A/95A PPAK Current - Continuous Drain (Id) @ 25°C: 23.2A (Ta), 95A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8DC Vgs(th) (Max) @ Id: 3.4V @ 250µA Power Dissipation (Max): 6.25W (Ta), 125W (Tc) |
auf Bestellung 9531 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
 |
SIDR668DP-T1-GE3 | Vishay Semiconductors |
MOSFETs 100V Vds 20V Vgs PowerPAK SO-8DC |
auf Bestellung 51452 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SIDR668DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 23.2A/95A PPAK
Current - Continuous Drain (Id) @ 25°C: 23.2A (Ta), 95A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Description: MOSFET N-CH 100V 23.2A/95A PPAK
Current - Continuous Drain (Id) @ 25°C: 23.2A (Ta), 95A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
auf Bestellung 9531 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 5.51 EUR |
| 10+ | 3.59 EUR |
| 100+ | 2.51 EUR |
| 500+ | 2.2 EUR |
| SIDR668DP-T1-GE3 |
|
Hersteller: Vishay Semiconductors
MOSFETs 100V Vds 20V Vgs PowerPAK SO-8DC
MOSFETs 100V Vds 20V Vgs PowerPAK SO-8DC
auf Bestellung 51452 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 6.83 EUR |
| 10+ | 4.47 EUR |
| 100+ | 3.33 EUR |
| 500+ | 2.8 EUR |
| 1000+ | 2.59 EUR |
| 3000+ | 2.5 EUR |