Produkte > VISAY > SIF912EDZ-T1-E3

SIF912EDZ-T1-E3 VISAY


72952.pdf Hersteller: VISAY
0713NO
auf Bestellung 9000 Stücke:

Lieferzeit 21-28 Tag (e)
Produktrezensionen
Produktbewertung abgeben

Technische Details SIF912EDZ-T1-E3 VISAY

Description: MOSFET 2N-CH 30V 7.4A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 2x5, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Common Drain, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.6W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 7.4A, Rds On (Max) @ Id, Vgs: 19mOhm @ 7.4A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: PowerPAK® (2x5).

Weitere Produktangebote SIF912EDZ-T1-E3

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
SIF912EDZ-T1-E3 Hersteller : VISHAY 72952.pdf
auf Bestellung 14300 Stücke:
Lieferzeit 21-28 Tag (e)
SIF912EDZ-T1-E3 Hersteller : VISHAY 72952.pdf 09+
auf Bestellung 14338 Stücke:
Lieferzeit 21-28 Tag (e)
SIF912EDZ-T1-E3 Hersteller : Vishay Siliconix 72952.pdf Description: MOSFET 2N-CH 30V 7.4A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 2x5
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.4A
Rds On (Max) @ Id, Vgs: 19mOhm @ 7.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® (2x5)
Produkt ist nicht verfügbar
SIF912EDZ-T1-E3 Hersteller : Vishay Siliconix 72952.pdf Description: MOSFET 2N-CH 30V 7.4A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 2x5
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.4A
Rds On (Max) @ Id, Vgs: 19mOhm @ 7.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® (2x5)
Produkt ist nicht verfügbar