Technische Details SIF912EDZ-T1-E3 VISHAY
Description: MOSFET 2N-CH 30V 7.4A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 2x5, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Common Drain, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.6W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 7.4A, Rds On (Max) @ Id, Vgs: 19mOhm @ 7.4A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: PowerPAK® (2x5).
Weitere Produktangebote SIF912EDZ-T1-E3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| SIF912EDZ-T1-E3 | Vishay Siliconix |
 Description: MOSFET 2N-CH 30V 7.4A PPAKPackaging: Tape & Reel (TR) Package / Case: PowerPAK® 2x5 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.6W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.4A Rds On (Max) @ Id, Vgs: 19mOhm @ 7.4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: PowerPAK® (2x5) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| SIF912EDZ-T1-E3 | Vishay Siliconix |
Description: MOSFET 2N-CH 30V 7.4A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® 2x5 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.6W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.4A Rds On (Max) @ Id, Vgs: 19mOhm @ 7.4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: PowerPAK® (2x5) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SIF912EDZ-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 7.4A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 2x5
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.4A
Rds On (Max) @ Id, Vgs: 19mOhm @ 7.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® (2x5)
Description: MOSFET 2N-CH 30V 7.4A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 2x5
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.4A
Rds On (Max) @ Id, Vgs: 19mOhm @ 7.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® (2x5)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIF912EDZ-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 7.4A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 2x5
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.4A
Rds On (Max) @ Id, Vgs: 19mOhm @ 7.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® (2x5)
Description: MOSFET 2N-CH 30V 7.4A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 2x5
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.4A
Rds On (Max) @ Id, Vgs: 19mOhm @ 7.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® (2x5)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH