SIHB22N60ET1-GE3

SIHB22N60ET1-GE3

SIHB22N60ET1-GE3

Hersteller: Vishay
E Series Power MOSFET
sihb22n60e.pdf
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Technische Details SIHB22N60ET1-GE3

Description: MOSFET N-CH 600V 21A TO263, Base Part Number: SIHB22, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Supplier Device Package: TO-263 (D²Pak), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 227W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1920pF @ 100V, Vgs (Max): ±30V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $), Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V, Drive Voltage (Max Rds On, Min Rds On): 10V, Current - Continuous Drain (Id) @ 25°C: 21A (Tc), Drain to Source Voltage (Vdss): 600V.

Preis SIHB22N60ET1-GE3 ab 0 EUR bis 0 EUR

SIHB22N60ET1-GE3
SIHB22N60ET1-GE3
Hersteller: Vishay / Siliconix
MOSFET 600V Vds E Series D2PAK TO-263
sihb22n60e-1761722.pdf
auf Bestellung 800 Stücke
Lieferzeit 14-28 Tag (e)
SIHB22N60ET1-GE3
SIHB22N60ET1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 21A TO263
Base Part Number: SIHB22
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D²Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 227W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1920pF @ 100V
Vgs (Max): ±30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Drain to Source Voltage (Vdss): 600V
sihb22n60e.pdf
auf Bestellung 785 Stücke
Lieferzeit 21-28 Tag (e)
SIHB22N60ET1-GE3
SIHB22N60ET1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 21A TO263
Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 227W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
sihb22n60e.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHB22N60ET1-GE3
SIHB22N60ET1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 21A TO263
Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 227W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
sihb22n60e.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen