SIHD1K4N60E-GE3 Vishay / Siliconix
auf Bestellung 2735 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 24+ | 2.23 EUR |
| 28+ | 1.88 EUR |
| 100+ | 1.54 EUR |
| 500+ | 1.35 EUR |
| 1000+ | 1.14 EUR |
| 3000+ | 1.09 EUR |
| 6000+ | 1.06 EUR |
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Technische Details SIHD1K4N60E-GE3 Vishay / Siliconix
Description: MOSFET N-CH 600V 4.2A TO252AA, Packaging: Bulk, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc), Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V, Power Dissipation (Max): 63W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: DPAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 172 pF @ 100 V.
Weitere Produktangebote SIHD1K4N60E-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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SIHD1K4N60E-GE3 | Hersteller : Vishay |
 Trans MOSFET N-CH 600V 4.2A 3-Pin(2+Tab) DPAK |
Produkt ist nicht verfügbar |
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| SIHD1K4N60E-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 2.6A; Idm: 5A; 63W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.6A Pulsed drain current: 5A Power dissipation: 63W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 1.45Ω Mounting: SMD Gate charge: 7.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SIHD1K4N60E-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 600V 4.2A TO252AA Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc) Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 172 pF @ 100 V |
Produkt ist nicht verfügbar |
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| SIHD1K4N60E-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 2.6A; Idm: 5A; 63W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.6A Pulsed drain current: 5A Power dissipation: 63W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 1.45Ω Mounting: SMD Gate charge: 7.5nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |