SIHD1K4N60E-GE3 Vishay / Siliconix
auf Bestellung 976 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.97 EUR |
| 10+ | 1.59 EUR |
| 100+ | 1.23 EUR |
| 500+ | 1.04 EUR |
| 1000+ | 0.80 EUR |
| 3000+ | 0.73 EUR |
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Technische Details SIHD1K4N60E-GE3 Vishay / Siliconix
Description: MOSFET N-CH 600V 4.2A TO252AA, Packaging: Bulk, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc), Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V, Power Dissipation (Max): 63W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: DPAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 172 pF @ 100 V.
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SIHD1K4N60E-GE3 | Hersteller : Vishay |
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SIHD1K4N60E-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 600V 4.2A TO252AA Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc) Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 172 pF @ 100 V |
Produkt ist nicht verfügbar |