SIHD3N50D-GE3 Vishay / Siliconix
| Anzahl | Preis |
|---|---|
| 2+ | 1.46 EUR |
| 10+ | 1.28 EUR |
| 100+ | 0.87 EUR |
| 500+ | 0.73 EUR |
| 1000+ | 0.62 EUR |
| 3000+ | 0.53 EUR |
| 6000+ | 0.51 EUR |
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Technische Details SIHD3N50D-GE3 Vishay / Siliconix
Description: MOSFET N-CH 500V 3A TO252AA, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 69W (Tc), Rds On (Max) @ Id, Vgs: 3.2Ohm @ 2.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 3A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: DPAK.
Weitere Produktangebote SIHD3N50D-GE3 nach Preis ab 0.63 EUR bis 2.15 EUR
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SIHD3N50D-GE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 500V 3A TO252AAVgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 69W (Tc) Rds On (Max) @ Id, Vgs: 3.2Ohm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: DPAK |
auf Bestellung 2980 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHD3N50D-GE3 | Hersteller : Vishay Siliconix |
MOSFET N-CH 500V 3A TO252 DPAK Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |
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| SIHD3N50D-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 1.9A; Idm: 5.5A; 69W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 1.9A Pulsed drain current: 5.5A Power dissipation: 69W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 3.2Ω Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |