SIHF12N60E-GE3

SIHF12N60E-GE3

Hersteller: Vishay
Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220FP
sihf12n6.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 1000 Stücke
Lieferzeit 14-21 Tag (e)
69+ 2.41 EUR
76+ 2.11 EUR
81+ 1.89 EUR
83+ 1.78 EUR

Technische Details SIHF12N60E-GE3

Description: MOSFET N-CH 600V 12A TO220, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220 Full Pack, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 33W (Tc), Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 937 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tape & Reel (TR), Vgs (Max): ±30V.

Preis SIHF12N60E-GE3 ab 1.78 EUR bis 7.67 EUR

SIHF12N60E-GE3
SIHF12N60E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 12A TO220
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 33W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 937 pF @ 100 V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
sihf12n6.pdf
auf Bestellung 377 Stücke
Lieferzeit 21-28 Tag (e)
4+ 7.51 EUR
10+ 6.76 EUR
100+ 5.43 EUR
SIHF12N60E-GE3
SIHF12N60E-GE3
Hersteller: Vishay / Siliconix
MOSFET 600V Vds 30V Vgs TO-220 FULLPAK
sihf12n6-1768895.pdf
auf Bestellung 366 Stücke
Lieferzeit 14-28 Tag (e)
7+ 7.67 EUR
10+ 6.92 EUR
100+ 5.56 EUR
500+ 4.58 EUR
SIHF12N60E-GE3
SIHF12N60E-GE3
Hersteller: Vishay
Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220FP
sihf12n6.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHF12N60E-GE3
SIHF12N60E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 12A TO220
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 33W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 937 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tape & Reel (TR)
Vgs (Max): ±30V
sihf12n6.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen