SIHF12N60E-GE3 Vishay / Siliconix
auf Bestellung 6563 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.44 EUR |
| 10+ | 3.38 EUR |
| 100+ | 2.31 EUR |
| 500+ | 2.01 EUR |
| 2000+ | 1.95 EUR |
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Technische Details SIHF12N60E-GE3 Vishay / Siliconix
Description: MOSFET N-CH 600V 12A TO220, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V, Power Dissipation (Max): 33W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220 Full Pack, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 937 pF @ 100 V.
Weitere Produktangebote SIHF12N60E-GE3 nach Preis ab 1.97 EUR bis 4.44 EUR
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SIHF12N60E-GE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 600V 12A TO220Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 937 pF @ 100 V |
auf Bestellung 699 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHF12N60E-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220FP |
Produkt ist nicht verfügbar |
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SIHF12N60E-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220FP |
Produkt ist nicht verfügbar |
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SIHF12N60E-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220FP |
Produkt ist nicht verfügbar |
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SIHF12N60E-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220FP |
Produkt ist nicht verfügbar |
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| SIHF12N60E-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 33W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.8A Pulsed drain current: 27A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 58nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SIHF12N60E-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 33W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.8A Pulsed drain current: 27A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 58nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |