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SIHF8N50L-E3

SIHF8N50L-E3 Vishay / Siliconix

sihf8n50.pdf Hersteller: Vishay / Siliconix
MOSFET 500V Vds 30V Vgs TO-220 FULLPAK
auf Bestellung 923 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
15+3.59 EUR
18+ 2.96 EUR
100+ 2.38 EUR
250+ 2.19 EUR
500+ 1.99 EUR
1000+ 1.71 EUR
2000+ 1.62 EUR
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Technische Details SIHF8N50L-E3 Vishay / Siliconix

Description: MOSFET N-CH 500V 8A TO220, Packaging: Tape & Reel (TR), Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 1Ohm @ 4A, 10V, Power Dissipation (Max): 40W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220 Full Pack, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 0 V, Input Capacitance (Ciss) (Max) @ Vds: 873 pF @ 25 V.

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SIHF8N50L-E3 SIHF8N50L-E3 Hersteller : Vishay Siliconix sihf8n50.pdf Description: MOSFET N-CH 500V 8A TO220
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 4A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220 Full Pack
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 0 V
Input Capacitance (Ciss) (Max) @ Vds: 873 pF @ 25 V
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