SIHF8N50L-E3 Vishay / Siliconix
auf Bestellung 893 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.43 EUR |
| 10+ | 2.01 EUR |
| 100+ | 1.61 EUR |
| 250+ | 1.49 EUR |
| 500+ | 1.35 EUR |
| 1000+ | 1.16 EUR |
| 2000+ | 1.11 EUR |
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Technische Details SIHF8N50L-E3 Vishay / Siliconix
Description: MOSFET N-CH 500V 8A TO220, Packaging: Tape & Reel (TR), Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 1Ohm @ 4A, 10V, Power Dissipation (Max): 40W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220 Full Pack, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 0 V, Input Capacitance (Ciss) (Max) @ Vds: 873 pF @ 25 V.
Weitere Produktangebote SIHF8N50L-E3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SIHF8N50L-E3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 500V 8A TO220Packaging: Tape & Reel (TR) Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 4A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220 Full Pack Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 0 V Input Capacitance (Ciss) (Max) @ Vds: 873 pF @ 25 V |
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