auf Bestellung 72 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 71+ | 2.25 EUR |
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Technische Details SIHG20N50E-GE3 Vishay
Description: MOSFET N-CH 500V 19A TO247AC, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19A (Tc), Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V, Power Dissipation (Max): 179W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247AC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V.
Weitere Produktangebote SIHG20N50E-GE3 nach Preis ab 2.25 EUR bis 7.62 EUR
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SIHG20N50E-GE3 | Hersteller : Vishay |
 Trans MOSFET N-CH 500V 19A 3-Pin(3+Tab) TO-247AC |
auf Bestellung 72 Stücke: Lieferzeit 14-21 Tag (e) |
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SIHG20N50E-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 500V 19A TO247AC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V Power Dissipation (Max): 179W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V |
auf Bestellung 500 Stücke: Lieferzeit 21-28 Tag (e) |
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SIHG20N50E-GE3 | Hersteller : Vishay Semiconductors |
MOSFET 500V Vds 30V Vgs TO-247AC |
auf Bestellung 990 Stücke: Lieferzeit 196-210 Tag (e) |
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SIHG20N50E-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 500V 19A 3-Pin(3+Tab) TO-247AC |
Produkt ist nicht verfügbar |
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| SIHG20N50E-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 12A Pulsed drain current: 42A Power dissipation: 179W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 184mΩ Mounting: THT Gate charge: 92nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SIHG20N50E-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 12A Pulsed drain current: 42A Power dissipation: 179W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 184mΩ Mounting: THT Gate charge: 92nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |