Weitere Produktangebote SIHG20N50E-GE3 nach Preis ab 3.09 EUR bis 10.01 EUR
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SIHG20N50E-GE3 | VISHAY |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 12A Pulsed drain current: 42A Power dissipation: 179W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 184mΩ Mounting: THT Gate charge: 92nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 142 Stücke: Lieferzeit 14-21 Tag (e) |
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SIHG20N50E-GE3 | Vishay |
Trans MOSFET N-CH 500V 19A 3-Pin(3+Tab) TO-247AC |
auf Bestellung 142 Stücke: Lieferzeit 14-21 Tag (e) |
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SIHG20N50E-GE3 | Vishay Semiconductors |
MOSFETs 500V Vds 30V Vgs TO-247AC |
auf Bestellung 180 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHG20N50E-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 500V 19A TO247AC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V Power Dissipation (Max): 179W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V |
auf Bestellung 630 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHG20N50E-GE3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 42A
Power dissipation: 179W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 42A
Power dissipation: 179W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 142 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 14+ | 6.2 EUR |
| 16+ | 5.45 EUR |
| 19+ | 4.68 EUR |
| 21+ | 4.2 EUR |
| 25+ | 3.69 EUR |
| 100+ | 3.12 EUR |
| SIHG20N50E-GE3 |
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Hersteller: Vishay
Trans MOSFET N-CH 500V 19A 3-Pin(3+Tab) TO-247AC
Trans MOSFET N-CH 500V 19A 3-Pin(3+Tab) TO-247AC
auf Bestellung 142 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 26+ | 6.95 EUR |
| 29+ | 6.02 EUR |
| 100+ | 4.96 EUR |
| SIHG20N50E-GE3 |
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Hersteller: Vishay Semiconductors
MOSFETs 500V Vds 30V Vgs TO-247AC
MOSFETs 500V Vds 30V Vgs TO-247AC
auf Bestellung 180 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 9.13 EUR |
| 10+ | 5.62 EUR |
| 100+ | 4.19 EUR |
| 500+ | 3.94 EUR |
| 1000+ | 3.27 EUR |
| 2500+ | 3.09 EUR |
| SIHG20N50E-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 19A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V
Description: MOSFET N-CH 500V 19A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V
auf Bestellung 630 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 10.01 EUR |
| 10+ | 6.64 EUR |
| 100+ | 4.74 EUR |
| 500+ | 3.93 EUR |