SIHG40N60E-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 40A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 20A, 10V
Power Dissipation (Max): 329W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4436 pF @ 100 V
Description: MOSFET N-CH 600V 40A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 20A, 10V
Power Dissipation (Max): 329W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4436 pF @ 100 V
auf Bestellung 716 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 10.47 EUR |
25+ | 8.36 EUR |
100+ | 7.48 EUR |
500+ | 6.6 EUR |
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Technische Details SIHG40N60E-GE3 Vishay Siliconix
Description: MOSFET N-CH 600V 40A TO247AC, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 75mOhm @ 20A, 10V, Power Dissipation (Max): 329W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247AC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4436 pF @ 100 V.
Weitere Produktangebote SIHG40N60E-GE3 nach Preis ab 6.3 EUR bis 10.84 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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SIHG40N60E-GE3 | Hersteller : Vishay Semiconductors | MOSFETs 600V Vds 30V Vgs TO-247AC |
auf Bestellung 389 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHG40N60E-GE3 Produktcode: 154667 |
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
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SIHG40N60E-GE3 | Hersteller : Vishay | Trans MOSFET N-CH 600V 40A 3-Pin(3+Tab) TO-247AC |
Produkt ist nicht verfügbar |