SIHH11N60E-T1-GE3

SIHH11N60E-T1-GE3

SIHH11N60E-T1-GE3

Hersteller: Vishay / Siliconix
MOSFET 600V Vds 30V Vgs PowerPAK 8 x 8
sihh11n60e-1761643.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 2948 Stücke
Lieferzeit 14-28 Tag (e)

7+ 8.11 EUR
10+ 7.31 EUR
25+ 6.92 EUR
100+ 5.98 EUR

Technische Details SIHH11N60E-T1-GE3

Description: MOSFET N-CH 600V 11A POWERPAK8X8, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $), Part Status: Discontinued at Digi-Key, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 600V, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 339mOhm @ 5.5A, 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V, Vgs (Max): ±30V, Input Capacitance (Ciss) (Max) @ Vds: 1076pF @ 100V, Power Dissipation (Max): 114W (Tc), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Supplier Device Package: PowerPAK® 8 x 8, Package / Case: 8-PowerTDFN.

Preis SIHH11N60E-T1-GE3 ab 5.98 EUR bis 8.11 EUR

SIHH11N60E-T1-GE3
SIHH11N60E-T1-GE3
Hersteller: Vishay
Trans MOSFET N-CH 600V 11A 4-Pin PowerPAK EP T/R
sihh11n60e.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHH11N60E-T1-GE3
SIHH11N60E-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 11A PPAK 8 X 8
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1076 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 339mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
sihh11n60e.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHH11N60E-T1-GE3
SIHH11N60E-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 11A POWERPAK8X8
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Discontinued at Digi-Key
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 339mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1076pF @ 100V
Power Dissipation (Max): 114W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 8 x 8
Package / Case: 8-PowerTDFN
sihh11n60e.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHH11N60E-T1-GE3
SIHH11N60E-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 11A PPAK 8 X 8
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1076 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 339mOhm @ 5.5A, 10V
sihh11n60e.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen