SIHH11N65EF-T1-GE3

SIHH11N65EF-T1-GE3

SIHH11N65EF-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 11A PPAK 8 X 8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 382mOhm @ 6A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1243 pF @ 100 V

sihh11n65ef.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 23 Stücke
Lieferzeit 21-28 Tag (e)
3+ 12.17 EUR
10+ 10.94 EUR

Technische Details SIHH11N65EF-T1-GE3

Description: MOSFET N-CHAN 600V 24A POWERPAK, Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V, Base Part Number: SIHH11, Vgs(th) (Max) @ Id: 4V @ 250µA, Rds On (Max) @ Id, Vgs: 382mOhm @ 6A, 10V, Drive Voltage (Max Rds On, Min Rds On): 10V, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Drain to Source Voltage (Vdss): 650V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $), Package / Case: 8-PowerTDFN, Supplier Device Package: PowerPAK® 8 x 8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 130W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1243pF @ 100V, Vgs (Max): ±30V.

Preis SIHH11N65EF-T1-GE3 ab 10.94 EUR bis 12.17 EUR

SIHH11N65EF-T1-GE3
SIHH11N65EF-T1-GE3
Hersteller: Vishay
E Series Power MOSFET with Fast Body Diode
sihh11n65ef.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHH11N65EF-T1-GE3
SIHH11N65EF-T1-GE3
Hersteller: Vishay / Siliconix
MOSFET 650V Vds 30V Vgs PowerPAK 8 x 8
sihh11n65ef-1768731.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHH11N65EF-T1-GE3
SIHH11N65EF-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CHAN 600V 24A POWERPAK
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Base Part Number: SIHH11
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 382mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 130W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1243pF @ 100V
Vgs (Max): ±30V
sihh11n65ef.pdf
auf Bestellung 3045 Stücke
Lieferzeit 21-28 Tag (e)
SIHH11N65EF-T1-GE3
SIHH11N65EF-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 11A PPAK 8 X 8
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 382mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1243 pF @ 100 V
sihh11n65ef.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen