SiHH11N65EF-T1-GE3 Vishay / Siliconix
auf Bestellung 2965 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 7.53 EUR |
| 10+ | 5.63 EUR |
| 25+ | 5.02 EUR |
| 100+ | 4.36 EUR |
| 250+ | 4.01 EUR |
| 500+ | 3.80 EUR |
| 1000+ | 3.57 EUR |
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Technische Details SiHH11N65EF-T1-GE3 Vishay / Siliconix
Description: MOSFET N-CH 650V 11A PPAK 8 X 8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 382mOhm @ 6A, 10V, Power Dissipation (Max): 130W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerPAK® 8 x 8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1243 pF @ 100 V.
Weitere Produktangebote SiHH11N65EF-T1-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SIHH11N65EF-T1-GE3 | Hersteller : Vishay |
 E Series Power MOSFET with Fast Body Diode |
Produkt ist nicht verfügbar |
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| SiHH11N65EF-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 27A; 130W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 7A Power dissipation: 130W Case: PowerPAK® 8x8L Gate-source voltage: ±30V On-state resistance: 382mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 27A Gate charge: 70nC Anzahl je Verpackung: 1 Stücke |
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SiHH11N65EF-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 650V 11A PPAK 8 X 8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 382mOhm @ 6A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® 8 x 8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1243 pF @ 100 V |
Produkt ist nicht verfügbar |
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SiHH11N65EF-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 650V 11A PPAK 8 X 8 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 382mOhm @ 6A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® 8 x 8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1243 pF @ 100 V |
Produkt ist nicht verfügbar |
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| SiHH11N65EF-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 27A; 130W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 7A Power dissipation: 130W Case: PowerPAK® 8x8L Gate-source voltage: ±30V On-state resistance: 382mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 27A Gate charge: 70nC |
Produkt ist nicht verfügbar |