SIHH21N65E-T1-GE3

SIHH21N65E-T1-GE3

SIHH21N65E-T1-GE3

Hersteller: Vishay / Siliconix
MOSFET 650V Vds 30V Vgs PowerPAK 8 x 8
sihh21n65e-1768730.pdf
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Technische Details SIHH21N65E-T1-GE3

Description: MOSFET N-CH 650V 20.3A PWRPAK8X8, Gate Charge (Qg) (Max) @ Vgs: 99nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 170mOhm @ 11A, 10V, Current - Continuous Drain (Id) @ 25°C: 20.3A (Tc), Base Part Number: SIHH21, Package / Case: 8-PowerTDFN, Supplier Device Package: PowerPAK® 8 x 8, Mounting Type: Surface Mount, Drain to Source Voltage (Vdss): 650V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Discontinued at Digi-Key, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $), Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 156W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 2404pF @ 100V, Vgs (Max): ±30V.

Preis SIHH21N65E-T1-GE3 ab 0 EUR bis 0 EUR

SIHH21N65E-T1-GE3
SIHH21N65E-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 20.3A PWRPAK8X8
Gate Charge (Qg) (Max) @ Vgs: 99nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 170mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 20.3A (Tc)
Base Part Number: SIHH21
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Discontinued at Digi-Key
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 156W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2404pF @ 100V
Vgs (Max): ±30V
sihh21n65e.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHH21N65E-T1-GE3
SIHH21N65E-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 20.3A PWRPAK8X8
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 20.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 170mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 99nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 2404pF @ 100V
Power Dissipation (Max): 156W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 8 x 8
Package / Case: 8-PowerTDFN
Base Part Number: SIHH21
sihh21n65e.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHH21N65E-T1-GE3
SIHH21N65E-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 20.3A PWRPAK8X8
Packaging: Cut Tape (CT)
Part Status: Discontinued at Digi-Key
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 20.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 170mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 99nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 2404pF @ 100V
Power Dissipation (Max): 156W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 8 x 8
Package / Case: 8-PowerTDFN
Base Part Number: SIHH21
sihh21n65e.pdf
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