SIHP25N40D-GE3 VISHAY
Hersteller: VISHAYCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 16A; 278W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 16A
Power dissipation: 278W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 88nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 543 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 20+ | 3.76 EUR |
| 22+ | 3.39 EUR |
| 28+ | 2.6 EUR |
| 30+ | 2.46 EUR |
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Technische Details SIHP25N40D-GE3 VISHAY
Description: MOSFET N-CH 400V 25A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V, Power Dissipation (Max): 278W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 400 V, Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1707 pF @ 100 V.
Weitere Produktangebote SIHP25N40D-GE3 nach Preis ab 2.11 EUR bis 7.1 EUR
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SIHP25N40D-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 16A; 278W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 16A Power dissipation: 278W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.17Ω Mounting: THT Gate charge: 88nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 543 Stücke: Lieferzeit 14-21 Tag (e) |
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SIHP25N40D-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 400V 25A 3-Pin(3+Tab) TO-220AB |
auf Bestellung 562 Stücke: Lieferzeit 14-21 Tag (e) |
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SIHP25N40D-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 400V 25A 3-Pin(3+Tab) TO-220AB |
auf Bestellung 562 Stücke: Lieferzeit 14-21 Tag (e) |
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SIHP25N40D-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 400V 25A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V Power Dissipation (Max): 278W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1707 pF @ 100 V |
auf Bestellung 1384 Stücke: Lieferzeit 21-28 Tag (e) |
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SIHP25N40D-GE3 | Hersteller : Vishay Semiconductors |
MOSFET 400V Vds 30V Vgs TO-220AB |
auf Bestellung 2019 Stücke: Lieferzeit 14-28 Tag (e) |
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SIHP25N40D-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 400V 25A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
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SIHP25N40D-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 400V 25A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |