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Technische Details SIHP25N40D-GE3 Vishay
Description: MOSFET N-CH 400V 25A TO220AB, Input Capacitance (Ciss) (Max) @ Vds: 1707 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V, Drain to Source Voltage (Vdss): 400 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220AB, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 278W (Tc), Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Weitere Produktangebote SIHP25N40D-GE3 nach Preis ab 2.38 EUR bis 6.31 EUR
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SIHP25N40D-GE3 | Vishay |
 Trans MOSFET N-CH 400V 25A 3-Pin(3+Tab) TO-220AB |
auf Bestellung 700 Stücke: Lieferzeit 14-21 Tag (e) |
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SIHP25N40D-GE3 | Vishay |
Trans MOSFET N-CH 400V 25A 3-Pin(3+Tab) TO-220AB |
auf Bestellung 562 Stücke: Lieferzeit 14-21 Tag (e) |
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SIHP25N40D-GE3 | Vishay |
Trans MOSFET N-CH 400V 25A 3-Pin(3+Tab) TO-220AB |
auf Bestellung 562 Stücke: Lieferzeit 14-21 Tag (e) |
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SIHP25N40D-GE3 | Vishay |
Trans MOSFET N-CH 400V 25A 3-Pin(3+Tab) TO-220AB |
auf Bestellung 270 Stücke: Lieferzeit 14-21 Tag (e) |
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SIHP25N40D-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 400V 25A TO220AB Input Capacitance (Ciss) (Max) @ Vds: 1707 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Drain to Source Voltage (Vdss): 400 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 278W (Tc) Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
auf Bestellung 634 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHP25N40D-GE3 |
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Hersteller: Vishay
Trans MOSFET N-CH 400V 25A 3-Pin(3+Tab) TO-220AB
Trans MOSFET N-CH 400V 25A 3-Pin(3+Tab) TO-220AB
auf Bestellung 700 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 700+ | 3.83 EUR |
| SIHP25N40D-GE3 |
|
Hersteller: Vishay
Trans MOSFET N-CH 400V 25A 3-Pin(3+Tab) TO-220AB
Trans MOSFET N-CH 400V 25A 3-Pin(3+Tab) TO-220AB
auf Bestellung 562 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 35+ | 5.03 EUR |
| 42+ | 4.11 EUR |
| 45+ | 3.7 EUR |
| 100+ | 3.01 EUR |
| 250+ | 2.56 EUR |
| 500+ | 2.38 EUR |
| SIHP25N40D-GE3 |
|
Hersteller: Vishay
Trans MOSFET N-CH 400V 25A 3-Pin(3+Tab) TO-220AB
Trans MOSFET N-CH 400V 25A 3-Pin(3+Tab) TO-220AB
auf Bestellung 562 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 35+ | 5.03 EUR |
| 42+ | 4.19 EUR |
| 45+ | 3.84 EUR |
| 100+ | 3.18 EUR |
| 250+ | 2.77 EUR |
| 500+ | 2.64 EUR |
| SIHP25N40D-GE3 |
|
Hersteller: Vishay
Trans MOSFET N-CH 400V 25A 3-Pin(3+Tab) TO-220AB
Trans MOSFET N-CH 400V 25A 3-Pin(3+Tab) TO-220AB
auf Bestellung 270 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 32+ | 5.6 EUR |
| 36+ | 4.91 EUR |
| 100+ | 3.49 EUR |
| SIHP25N40D-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 25A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 1707 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 278W (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 400V 25A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 1707 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 278W (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 634 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.31 EUR |
| 50+ | 3.46 EUR |
| 100+ | 3.17 EUR |
| 500+ | 2.65 EUR |