auf Bestellung 249 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 32.47 EUR |
| 10+ | 28.86 EUR |
| 30+ | 27.79 EUR |
| 60+ | 27.3 EUR |
| 120+ | 25.22 EUR |
| 510+ | 21.65 EUR |
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Technische Details SIHS90N65E-GE3 Vishay / Siliconix
Description: E SERIES POWER MOSFET SUPER-247,, Packaging: Tube, Package / Case: TO-274AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 87A (Tc), Rds On (Max) @ Id, Vgs: 29mOhm @ 45A, 10V, Power Dissipation (Max): 625W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: SUPER-247™ (TO-274AA), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 591 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11826 pF @ 100 V.
Weitere Produktangebote SIHS90N65E-GE3 nach Preis ab 25.68 EUR bis 33.05 EUR
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SIHS90N65E-GE3 | Hersteller : Vishay Siliconix |
 Description: E SERIES POWER MOSFET SUPER-247,Packaging: Tube Package / Case: TO-274AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 87A (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 45A, 10V Power Dissipation (Max): 625W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SUPER-247™ (TO-274AA) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 591 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11826 pF @ 100 V |
auf Bestellung 233 Stücke: Lieferzeit 10-14 Tag (e) |
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