SIHS90N65E-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET SUPER-247,
Packaging: Tube
Package / Case: TO-274AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 45A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SUPER-247™ (TO-274AA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 591 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11826 pF @ 100 V
Produktrezensionen
Produktbewertung abgeben
Technische Details SIHS90N65E-GE3 Vishay Siliconix
Description: E SERIES POWER MOSFET SUPER-247,, Packaging: Tube, Package / Case: TO-274AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 87A (Tc), Rds On (Max) @ Id, Vgs: 29mOhm @ 45A, 10V, Power Dissipation (Max): 625W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: SUPER-247™ (TO-274AA), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 591 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11826 pF @ 100 V.
Weitere Produktangebote SIHS90N65E-GE3 nach Preis ab 22.33 EUR bis 35.27 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
|
SIHS90N65E-GE3 | Vishay / Siliconix |
MOSFETs SPR247 650V 87A N-CH MOSFET |
auf Bestellung 37 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SIHS90N65E-GE3 |
![]() |
Hersteller: Vishay / Siliconix
MOSFETs SPR247 650V 87A N-CH MOSFET
MOSFETs SPR247 650V 87A N-CH MOSFET
auf Bestellung 37 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 35.27 EUR |
| 10+ | 22.53 EUR |
| 100+ | 22.33 EUR |

