Produkte > VISHAY SILICONIX > SIJA74DP-T1-GE3
SIJA74DP-T1-GE3

SIJA74DP-T1-GE3 Vishay Siliconix

doc?77516 Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 24A/81.2A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 81.2A (Tc)
Rds On (Max) @ Id, Vgs: 3.99mOhm @ 10A, 10V
Power Dissipation (Max): 4.1W (Ta), 46.2W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 20 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.84 EUR
Mindestbestellmenge: 3000
Produktrezensionen
Produktbewertung abgeben

Technische Details SIJA74DP-T1-GE3 Vishay Siliconix

Description: MOSFET N-CH 40V 24A/81.2A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 81.2A (Tc), Rds On (Max) @ Id, Vgs: 3.99mOhm @ 10A, 10V, Power Dissipation (Max): 4.1W (Ta), 46.2W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Vgs (Max): +20V, -16V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 20 V.

Weitere Produktangebote SIJA74DP-T1-GE3 nach Preis ab 0.94 EUR bis 2.21 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
SIJA74DP-T1-GE3 SIJA74DP-T1-GE3 Hersteller : Vishay Siliconix doc?77516 Description: MOSFET N-CH 40V 24A/81.2A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 81.2A (Tc)
Rds On (Max) @ Id, Vgs: 3.99mOhm @ 10A, 10V
Power Dissipation (Max): 4.1W (Ta), 46.2W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 20 V
auf Bestellung 3169 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
12+2.21 EUR
14+ 1.91 EUR
100+ 1.32 EUR
500+ 1.1 EUR
1000+ 0.94 EUR
Mindestbestellmenge: 12
SIJA74DP-T1-GE3 SIJA74DP-T1-GE3 Hersteller : Vishay / Siliconix doc?77516 MOSFET N-CHANNEL 40V (D-S) 150C MOSFET
auf Bestellung 408 Stücke:
Lieferzeit 14-28 Tag (e)