SIJA74DP-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 24A/81.2A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +20V, -16V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 4.1W (Ta), 46.2W (Tc)
Rds On (Max) @ Id, Vgs: 3.99mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 81.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
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Technische Details SIJA74DP-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 40V 24A/81.2A PPAK, Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): +20V, -16V, Supplier Device Package: PowerPAK® SO-8, Vgs(th) (Max) @ Id: 2.4V @ 250µA, Power Dissipation (Max): 4.1W (Ta), 46.2W (Tc), Rds On (Max) @ Id, Vgs: 3.99mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 81.2A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR).
Weitere Produktangebote SIJA74DP-T1-GE3 nach Preis ab 0.59 EUR bis 2.34 EUR
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SIJA74DP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 40V 24A/81.2A PPAK Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): +20V, -16V Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 2.4V @ 250µA Power Dissipation (Max): 4.1W (Ta), 46.2W (Tc) Rds On (Max) @ Id, Vgs: 3.99mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 81.2A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) |
auf Bestellung 3169 Stücke: Lieferzeit 10-14 Tag (e) |
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SIJA74DP-T1-GE3 | Vishay / Siliconix |
MOSFETs N-CHANNEL 40V (D-S) 150C MOSFET |
auf Bestellung 16816 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SIJA74DP-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 24A/81.2A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +20V, -16V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 4.1W (Ta), 46.2W (Tc)
Rds On (Max) @ Id, Vgs: 3.99mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 81.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 40V 24A/81.2A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +20V, -16V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 4.1W (Ta), 46.2W (Tc)
Rds On (Max) @ Id, Vgs: 3.99mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 81.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
auf Bestellung 3169 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 12+ | 1.5 EUR |
| 14+ | 1.29 EUR |
| 100+ | 0.89 EUR |
| 500+ | 0.75 EUR |
| 1000+ | 0.64 EUR |
| SIJA74DP-T1-GE3 |
|
Hersteller: Vishay / Siliconix
MOSFETs N-CHANNEL 40V (D-S) 150C MOSFET
MOSFETs N-CHANNEL 40V (D-S) 150C MOSFET
auf Bestellung 16816 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.34 EUR |
| 10+ | 1.48 EUR |
| 100+ | 0.99 EUR |
| 500+ | 0.77 EUR |
| 1000+ | 0.7 EUR |
| 3000+ | 0.61 EUR |
| 6000+ | 0.59 EUR |